Samsung Electronics Co., Ltd.

Chel-jong Choi

Jong-Bong Park

Dong-Woo Lee

Tae-gyu Kim

Soo-bong Heo

A phase-change random access memory (PRAM) device including a plurality of nanowires and a method of manufacturing the same include: a lower structure including a plurality of contact plugs; the nanowires extending into the contact plugs from surfaces defining a respective terminal end of the contact plugs; and a phase-change layer formed on top of the nanowires. Therefore, a reset or a set current consumed by the PRAM device is significantly reduced.

Phase-change memory device including nanowires and method of manufacturing the same

Provided is a method of fabricating a semiconductor device, the method including: forming an insulating layer on a single crystal substrate; etching the insulating layer in a predetermined pattern to expose the surface of the single crystal substrate; depositing an amorphous material on the insulating layer and the exposed surface of the single crystal substrate; and completely melting the amorphous material on the single crystal substrate and the insulating layer using laser annealing and crystallizing the melted amorphous material. The semiconductor device has a single crystalline silicon gate on the insulating layer.

Method of fabricating semiconductor device

Provided is a semiconductor device having a suicide thin film with thermal stability and a method of manufacturing the same. The semiconductor device includes a silicon substrate containing Si a gate oxide film formed on the silicon substrate, a gate electrode containing Si formed on the gate oxide film, a spacer formed on side walls of the gate oxide film and the gate electrode, a LDD region formed in the silicon substrate under the spacer, a source/drain region formed in the silicon substrate, a NiSi thin film formed on the source/drain region and the gate electrode by reacting a Ni film with the source/drain region and the gate electrode; and a nitride film formed on the NiSi thin film formed by surface treating the nickel film using Ar plasma and reacting the Ni film with nitrogen. The, a semiconductor device having the NiSi thin film has a low sheet resistance and high thermal stability can be obtained.

Semiconductor device with silicide film and method of manufacturing the same

A semiconductor device comprising a metal silicide film with uniform surface morphology and interface morphology and a method of manufacturing the same are provided. The metal silicide film of the semiconductor device exhibits low sheet resistance and excellent thermal stability. Therefore, by using the semiconductor device fabrication method, high performance, high quality semiconductor devices can be manufactured.

Method of manufacturing semiconductor device and semiconductor device manufactured using the same

An electron beam (EB) lithography method using a new material is provided. The method includes forming a thin layer using a Pb-based material; and patterning the thin layer by partially volatilizing the thin layer by irradiating electron beams. In this method, the thin layer formed of the Pb-based material is patterned using e-beams so that the linewidth of patterns formed on the thin layer can be greatly reduced.

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Osan-si, South Korea

Chel-jong Choi