United Microelectronics Corp.

Chein-Cheng Wang

Shih-Chanh Chang

The present invention is a method of fabricating interconnects. A semiconductor substrate having a dielectric layer is provided. The dielectric layer has a via opening therein, which exposes the semiconductor substrate. Next, the surfaces of the via opening is covered with a conformal titanium layer formed by a sputtering process. The surface of the conformal titanium layer is covered with an Al&mdash;Si&mdash;Cu alloy layer formed by a sputtering process at a temperature of about 0&deg; C. to 200&deg; C. Then, the surface of the Al&mdash;Si&mdash;Cu alloy layer is covered with an Al&mdash;Cu alloy layer formed by a sputtering process at a temperature of about 380&deg; C. to 450&deg; C., which Al&mdash;Cu alloy layer fills the via opening. The Al&mdash;Cu alloy layer, the Al&mdash;Si&mdash;Cu alloy layer and the wetting layer on the dielectric layer are patterned by photolithography and etching process.

Method of fabricating vias

A method of fabricating a glue layer and a barrier layer. A Ti layer is formed with a collimator sputtering in the via opening or the contact opening of the substrate. Through the control of flow of N,and Ar, a nitride mode TiN,layer is formed on the Ti layer by sputtering. The nitride mode TiN,layer and the Ti layer uncovered by the nitride mode TiN,layer are treated with N,RF plasma. This strengthens the structure of the nitride mode TiN,layer and allows the reaction with the exposed Ti layer so that it is transformed into a TiN,layer.

Fabricating method of glue layer and barrier layer

A method for forming a metal/metal nitride layer. A dielectric layer is formed on a substrate comprising a conductive region. The dielectric layer comprises an opening exposing a portion of the conductive region. A conformal metal layer is formed on the dielectric layer by physical vapor deposition using a collimator to cover the exposed conductive region. A metal nitride layer is formed on the metal layer. A part of the metal layer may be exposed due to poor step coverage. An implanting process is performed on the metal nitride layer and on the exposed metal layer using a nitric gas.

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Taichung Hsien, Taiwan

Chein-Cheng Wang