Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

CheeWee Liu

Yee-Chia Yeo

Chih-Sheng Chang

Cheng-Yi Peng

Samuel C Pan

I-Hsieh Wong

Fang-Liang Lu

Ya-Jui Tsou

Shih-Hsien Huang

Zong-You Luo

Wen-Hsien Tu

Shih-Ya Lin

I-Cheng Tung

A semiconductor device includes a first layer that includes a first semiconductor material disposed on a semiconductor substrate, and a second layer of a second semiconductor material disposed on the first layer. The semiconductor substrate includes Si. The first semiconductor material and the second semiconductor material are different. The second semiconductor material is formed of an alloy including a first element and Sn. A surface region of an end portion of the second layer at both ends of the second layer has a higher concentration of Sn than an internal region of the end portion of the second layer. The surface region surrounds the internal region.

Semiconductor device and manufacturing method thereof

The disclosure is directed to spin-orbit torque MRAM structures and methods. A SOT channel of the SOT-MRAM includes multiple heavy metal layers and one or more dielectric dusting layers each sandwiched between two adjacent heavy metal layers. The dielectric dusting layers each include discrete molecules or discrete molecule clusters of a dielectric material scattered in or adjacent to an interface between two adjacent heavy metal layers.

Magnetic tunnel junction structures and related methods

A semiconductor device and a method of forming the same are disclosed. The device comprises a semiconductor substrate comprised of a first semiconductor material and having a plurality of isolation features, thereby defining a first active region and a second active region; a first fin semiconductor feature comprised of a second semiconductor material and formed in the first active region; and a second fin semiconductor feature comprised of a second semiconductor material and formed in the second active region. The first fin semiconductor feature is tensile strained and the second fin semiconductor feature is compressively strained.

Method and structure for finFET devices

Growing community of inventors

Hsinchu, Taiwan

CheeWee Liu