Taiwan Semiconductor Manufacturing Comp. Ltd.

Che-Yu Yeh

Wei-Cheng Wu

Tsung-Shu Lin

Tsung-Yu Chen

Li-Han Hsu

Chien-Fu Tseng

Yen-Ming Chen

Yasutoshi Okuno

Pang-Yen Tsai

Chung-Cheng Wu

Chien-Hua Huang

Gwan-Sin Chang

Cheng-Long Chen

Chee Wee Liu

Bing J Sheu

Ying-Hsuan Wang

Sun-Rong Jan

A stacked via structure disposed on a conductive pillar of a semiconductor die is provided. The stacked via structure includes a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer, a second conductive via, and a second redistribution wiring. The first dielectric layer covers the semiconductor die. The first conductive via is embedded in the first dielectric layer and electrically connected to the conductive pillar. The first redistribution wiring covers the first conductive via and the first dielectric layer. The second dielectric layer covers the first dielectric layer and the first redistribution wiring. The second conductive via is embedded in the second dielectric layer and landed on the first redistribution wiring. The second redistribution wiring covers the second conductive via and the second dielectric layer. A lateral dimension of the first conductive via is greater than a lateral dimension of the second conductive via.

Stacked via structure disposed on a conductive pillar of a semiconductor die

A semiconductor device comprises a substrate with a first side and a second side, wherein a plurality of active circuits are formed adjacent to the first side of the substrate and a plurality of through silicon vias arranged in a polygon shape and extending from the first side of to the second side, wherein the polygon shape has more than six sides, and wherein each through silicon via is placed at a corresponding apex of the polygon shape.

Through silicon via layout pattern

Methods for forming semiconductor structures are provided. The method for manufacturing a semiconductor structure includes forming a hard mask structure over a substrate and etching the substrate through an opening of the hard mask structure to form a trench. The method for manufacturing a semiconductor structure further includes removing a portion of the hard mask structure to enlarge the opening and forming an epitaxial-growth structure in the trench and the opening.

Method for forming semiconductor structure with epitaxial growth structure

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Taipei, Taiwan

Che-Yu Yeh