Basf Se Corporation

Che Wei Wang

Andreas Klipp

Yi Ping Cheng

Jhih Jheng Ke

Joannes Theodorus Valentinus Hoogboom

Chia Ching Ting

A composition for selectively etching a layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt, and a corresponding process, are described. Further described is a process for the manufacture of a semiconductor device, including the step of selectively etching at least one layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt by contacting the at least one layer including an aluminum compound with the described composition.

Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobalt

Growing community of inventors

Taoyuan, Taiwan

Che Wei Wang