Macronix International Co., Ltd.

Che-Wei Liang

Shang-Chi Yang

Chih-He Chiang

Chung-Han Wu

A memory device, a failure bits detector, and a failure bits detection method thereof are provided. The failure bits detector includes a current generator, a current mirror, and a comparator. The current generator generates a first current according to a reference code. The current mirror mirrors the first current to generate a second current at a second end of the current mirror. The comparator compares a first voltage at a first input end with a second voltage at a second input end to generate a detection result.

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Hsinchu County, Taiwan

Che-Wei Liang