At+t Corp.

At&t Bell Laboratories

American Telephone & Telegraph Co., At&t Bell Laboratories

Che-Tsung Chen

Thaddeus John Gabara

Yehuda Smooha

Bernard L Morris

Kevin D Kolwicz

Won J Yoon

Chin-Jen Lin

CMOS integrated circuit buffers typically use a dual-diode electrostatic discharge (ESD) protection technique. However, in some cases that technique inadvertently causes one of the diodes to conduct when a desired signal voltage is present on the bondpad, thereby clipping the desired signal. This occurs, for example, when an output buffer on an unpowered device is connected to an active bus, or when the input buffer of a 3 volt device receives a 5 volt signal. The present invention solves this problem by using a bipolar (e.g., pnp) protection transistor connected between the bondpad and a power supply bus (e.g., V.sub.SS). The base of the transistor is connected to the bondpad through a resistor that provides a time delay due to the R-C time constant that includes distributed capacitance. The time delay allows for a high conduction period, during which an ESD event is conducted through the bipolar transistor, thereby protecting the input or output buffer.

Bipolar ESD protection for integrated circuits

Integrated circuits having a large number of transmission gate logic stages have been found to draw a large current surge on power-up. This is due to the floating input node of complementary inverters causing current to flow briefly before clock pulses arrive. The present invention provides a DC voltage on the gates of the pass transistors until the system clock pulses arrive, thereby eliminating the floating node. An optional periodic window may be generated to examine the system clock after power-up, to detect a loss of clock condition.

Dynamic CMOS current surge control

Growing community of inventors

Allentown, PA, United States of America

Che-Tsung Chen