Taiwan Semiconductor Manufacturing Comp. Ltd.

Che-Tsao Wang

Chi-Wen Liu

Jung-Chih Tsao

Chen-Peng Fan

Hsien-Ping Feng

Steven Lin

Si-Kua Cheng

A novel method for preventing the formation of voids in metal interconnects fabricated on a wafer, particularly during a thermal anneal process, is disclosed. The method includes fabricating metal interconnects between metal lines on a wafer. During a thermal anneal process carried out to reduce electrical resistance of the interconnects, the wafer is positioned in spaced-apart relationship to a wafer heater. This spacing configuration facilitates enhanced stabilility and uniformity in heating of the wafer by reducing the presence of particles on and providing a uniform flow of heated air or gas against and the wafer backside. This eliminates or at least substantially reduces the formation of voids in the interconnects during the anneal process.

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Taipei, Taiwan

Che-Tsao Wang