Macronix International Co., Ltd.

Che-Shih Lin

Tao-Cheng Lu

Yao-Wen Chang

Shih-Yu Wang

Chia-Ling Lu

Yan-Yu Chen

Yu-Lien Liu

A memory device and a programming method thereof are provided, and the programming method for the memory device includes following steps. During a first period, a first voltage from a common source line is transmitted to first ends of a first memory cell string and a second memory cell string, and second ends of the first and the second memory cell strings are floated. During a second period, the first ends of the first and the second memory cell strings are floated, a second voltage and a third voltage are respectively transmitted to the second ends of the first and the second memory cell strings, and a programming voltage and a plurality of passing voltages are applied, so as to inhibit programming of the first memory cell string and sequentially program a plurality of memory cells in the second memory cell string from a second side of a memory array.

Memory device and programming method thereof

An RC delay circuit for providing electrostatic discharge (ESD) protection is described. The circuit employs an NMOS transistor and a PMOS transistor to produce a large effective resistance using a relatively small circuit layout area.

Electrostatic discharge protectors having increased RC delays

Growing community of inventors

Hsinchu, Taiwan

Che-Shih Lin