United Microelectronics Corp.

Che-Nan Tsai

Yu-Ren Wang

Chiu-Hsien Yeh

Po-Chun Chen

Chun-Ling Lin

Chih-Hsun Lin

Szu-Hao Lai

Te-Lin Sun

A semiconductor structure includes a substrate, an oxide layer, a metallic oxynitride layer and a metallic oxide layer. The oxide layer is located on the substrate. The metallic oxynitride layer is located on the oxide layer. The metallic oxide layer is located on the metallic oxynitride layer. In addition, the present invention also provides a semiconductor process for forming the semiconductor structure.

Semiconductor structure and fabrication method thereof

A manufacturing method for a semiconductor device having a metal gate includes providing a substrate having at least a first semiconductor device formed thereon, forming a first gate trench in the first semiconductor device, forming a first work function metal layer in the first gate trench, and performing a decoupled plasma oxidation to the first work function metal layer.

Manufacturing method for semiconductor device having metal gate

Growing community of inventors

Tainan, Taiwan

Che-Nan Tsai