Globalwafers Co., Ltd.

Che Ming Liu

Wen-Ching Hsu

Jia-Zhe Liu

Chih-Yuan Chuang

Manhsuan Lin

Yen Lun Huang

A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlInGaN, where x≤1 and y≥0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.

Buffer layer structure to improve gan semiconductors

A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlInGaN, where x&#x2264;1 and y&#x2265;0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.

Growing community of inventors

Hsinchu, Taiwan

Che Ming Liu