Win Semiconductors Corp.

Che-Kai Lin

Wei-Chou Wang

Jhih-Han Du

Yi Wei Lien

Cheng-Kuo Lin

Yan-Cheng Lin

Chieh-Chih Huang

Jiun-De Wu

A semiconductor device includes: a substrate; a channel layer disposed on the substrate, wherein the channel layer is made of GaN; a barrier layer disposed on the channel layer, wherein the barrier layer is made of AlGaN; and an inserting structure inserted between the channel layer and the barrier layer. The inserting structure includes: a first inserting layer disposed on the channel layer, wherein the first inserting layer is made of AlGaN; and a second inserting layer disposed on the first inserting layer, wherein the second inserting layer is made of AlGaN, and y is greater than x. The semiconductor device further includes: a gate electrode disposed on the barrier layer; a source electrode and a drain electrode disposed on the barrier layer and respectively at opposite sides of the gate electrode; and a spike region formed below at least one of the source electrode and the drain electrode.

Semiconductor device and power amplifier

A semiconductor structure for improving the thermal stability and Schottky behavior by engineering the stress in a III-nitride semiconductor, comprising a III-nitride semiconductor and a gate metal layer. The III-nitride semiconductor has a top surface on which a conductive area and a non-conductive area are defined. The gate metal layer is formed directly on the top surface of the III-nitride semiconductor and comprises a gate connection line and at least one gate contact extending from the gate connection line in a second direction perpendicular to the length of the gate connection line. The at least one gate contact forms a Schottky contact with the III-nitride semiconductor on the conductive area, and the gate connection line is in direct contact with the III-nitride semiconductor on the non-conductive area. The non-conductive area of the III-nitride semiconductor is at least partially covered by the gate connection line.

Semiconductor structure for improving thermal stability and Schottky behavior

A semiconductor structure for improving the gate metal adhesion and the Schottky stability, comprising: a III-nitride semiconductor having a top surface on which a conductive area and a non-conductive area are defined; a source contact metal and a first drain contact metal forming ohmic contact with the III-nitride semiconductor on the conductive area, and the first drain contact metal provided at one side of the source contact metal; and a gate metal layer comprising a gate connection line and a first gate finger extending from the gate connection line, the first gate finger interposing between the source contact metal and the first drain contact metal and forming a Schottky contact with the III-nitride semiconductor on the conductive area, wherein the first gate finger has a first terminal anchor at an end thereof surrounding the source contact metal, and the first terminal anchor has an increased width.

Semiconductor structure for improving the gate adhesion and Schottky stability

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Taoyuan, Taiwan

Che-Kai Lin