Vanguard International Semiconductor Corporation

Che-Hua Chang

Chih-Cherng Liao

Chih-Wei Lin

Chung-Ren Lao

Ching-Yi Hsu

Hsiao-Ying Yang

Pi-Kuang Chuang

Yun-Chou Wei

Wen-Chung Chen

Yung-Lung Chou

Chung-Te Chou

Ya-Han Liang

Kuan-I Ho

Kuo-Chien Hsu

Cheng-Lun Cho

The present disclosure provides a high voltage semiconductor device includes a substrate, a first well region, a second well region, a source, a drain, a first electrode structure and a second electrode structure. The first well region and the second well region are disposed in the substrate, and which includes a first conductive type and a second conductive type which are complementary with each other. The source and the drain are respectively disposed within the first well region and the second well region. The first electrode structure and the second electrode structure are both disposed on the substrate, and the distance between the top surface of an electrode of the first electrode structure and the top surface of the substrate includes a first height and a second height which are different from each other.

High voltage semiconductor device

A high voltage (HV) semiconductor device includes: a semiconductor substrate having a first conductivity type; a gate structure disposed over a portion of the semiconductor substrate; a pair of spacers respectively disposed over a sidewall of the gate structure, wherein one of the spacers is a composite spacer comprising a first insulating spacer contacting the gate structure, a dummy gate structure, and a second insulating spacer; a first drift region disposed in a portion of the semiconductor, underlying a portion of the gate structure and one of the pair of spacers, having a second conductivity type opposite to the first conductivity type; and a pair of doping regions, respectively disposed in a portion of the semiconductor substrate on opposite sides of the gate structure, wherein the pair of doping regions include the second conductivity type and one of the doping regions is disposed in the first drift region.

High voltage semiconductor device and method for fabricating the same

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Hsinchu, Taiwan

Che-Hua Chang