Taiwan Semiconductor Manufacturing Comp. Ltd.

Che-Hsiang Hsueh

Jiech-Fun Lu

Yu-Lung Yeh

Ching-Chung Su

Jian Yuan Wu

Ming-Chi Wu

Chi-Yuan Wen

Chun-Chieh Fang

A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

Semiconductor structure and manufacturing method thereof

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Tainan, Taiwan

Che-Hsiang Hsueh