Taiwan Semiconductor Manufacturing Comp. Ltd.

Che-Fu Chiu

Chun-Feng Nieh

Yee-Chia Yeo

Huicheng Chang

Bau-Ming Wang

Tsan-Chun Wang

Chiao-Ting Tai

Sih-Jie Liu

A method of transferring semiconductor wafers and a semiconductor wafer support device including lift pins having a first end configured to contact a backside surface of the semiconductor wafer and at least one stress reduction feature. The stress reduction feature may be configured to reduce contact stress between the lift pins and the wafer.

Method and device to reduce epitaxial defects due to contact stress upon a semicondcutor wafer

A semiconductor device may include a semiconductor fin, a source/drain region extending from the semiconductor fin, and a gate electrode over the semiconductor fin. The semiconductor fin may include a first well and a channel region over the first well. The first well may have a first dopant at a first dopant concentration and the channel region may have the first dopant at a second dopant concentration smaller than the first dopant concentration. The first dopant concentration may be in range from 10atoms/cmto 10atoms/cm.

Semiconductor device having a doped fin well

A method of forming a semiconductor device includes implanting dopants of a first conductivity type into a semiconductor substrate to form a first well, epitaxially growing a channel layer over the semiconductor substrate, forming a fin from the second semiconductor material, and forming a gate structure over a channel region of the fin. The semiconductor substrate includes a first semiconductor material. Implanting the dopants may be performed at a temperature in a range of 150&#xb0; C. to 500&#xb0; C. The channel layer may include a second semiconductor material. The channel layer may be doped with dopants of the first conductivity type.

Method of forming a semiconductor device with implantation of impurities at high temperature

A method for forming a semiconductor device structure is provided. The method includes forming a semiconductor structure over a semiconductor substrate. The method also includes implanting carbon into the semiconductor structure. The method further includes implanting gallium into the semiconductor structure. In addition, the method includes heating the semiconductor structure after the implanting of carbon and gallium.

Formation of semiconductor device structure by implantation

A method for forming a semiconductor structure comprises heating a solid material to form a gaseous substance; ionizing the gaseous substance to produce a first type of ions; and implanting the first type of ions into a semiconductor substrate. The method can achieve better abruptness, better shallow junction depth, and better sheet resistance.

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Taipei, Taiwan

Che-Fu Chiu