Taiwan Semiconductor Manufacturing Comp. Ltd.

Che-Chun Lu

Ching-Hung Kao

Fu-Cheng Chang

Chia-Pin Cheng

Po-Chun Chiu

A semiconductor device includes a substrate and a device. The substrate has a first surface and a second surface opposite to each other. The substrate includes a first well region, and the first well region includes a first shallow implantation region adjacent to the first surface and a first deep implantation region adjacent to the second surface, in which a dopant concentration of the first deep implantation region at the second surface is substantially equal to 0. The device is disposed on the first surface of the substrate and adjoins the first shallow implantation region.

Implantation process for semiconductor device

An image sensor and a fabrication method thereof are provided. In the fabrication method of the image sensor, at first, two isolation features are formed in a substrate to define a pixel region. Then, a floating node and a pinning layer are formed in one of the isolation features, in which a space region is located between the floating node and the pinning layer, and the floating node has a first conductivity type different from a second conductivity type of the pinning layer. Thereafter, a light-sensitive element is formed in the pixel region, and a transfer gate is formed on the pixel region, thereby forming a pixel. Since there is a space region located between the floating node and the pinning layer, a leakage path between the floating node and the pinning layer can be prevented.

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Tainan, Taiwan

Che-Chun Lu