National Science Council

Che-Ching Chen

Yean-Kuen Fang

Kuen-Hsien Wu

A method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance, by which one or more single-crystal silicon carbide/single-crystal silicon layer(s) with different types of dopants is/are formed on a silicon substrate, thereby forming new-type multiple negative differential resistance based on (a) single-crystal silicon carbide/single-crystal silicon heterojunction(s). The heterojunction(s) structure from top to bottom can be (1) Al/P--SiC/GCL/N--Si/Al; (2) Al/P--Si/GCL/P--SiC/GCL/N--Si/Al; and (3) Al/P--SiC/GCL/N--Si/GCL/P--SiC/GCL/N--Si/Al, wherein the GCL (Graded Reactant-gas Composition Ratio Layer) is a buffer layer formed between single-crystal silicon carbide layer and single-crystal silicon layer by gradually changing the composition of reaction gases. The structure and process of devices with negative differential resistance according to the invention are simpler than those of the prior art using Group III-V semiconductors. Furthermore, since a cheaper silicon substrate, and silicon carbide that can withstand high temperatures and radiation are used in this invention, manufacturing costs are greatly reduced.

Growing community of inventors

Tainan Hsien, Taiwan

Che-Ching Chen