Samsung Electronics Co., Ltd.

Chayoung Yoo

Younsoo Kim

Hiroki Sato

Naoki Yamada

Younjoung Cho

Jaehyoung Choi

Tsubasa Shiratori

Sangyeol Kang

Sukjin Chung

Geunkyu Choi

Chin Moo Cho

JongCheol Lee

A trialkylsilane-based silicon precursor compound may be expressed by Si(R)X, i=1-3, where each of 'R', 'R', and &#x201c;R&#x201d; is a hydrogen or an alkyl having 1-5 carbon(s), all of &#x201c;R&#x201d;, &#x201c;R&#x201d;, and &#x201c;R&#x201d; are not hydrogen, &#x201c;X&#x201d; is one of hydrogen, a hydroxyl group, an amide group, an alkoxide group, a halide group, or Si(R*), and &#x201c;R*&#x201d; is a hydrogen or an alkyl group having 1&#x2dc;5 carbon(s).

Method of forming a layer using a trialkylsilane silicon precursor compound

According to example embodiments, a method of forming a layer includes: forming a dielectric layer using a metal precursor expressed by one of RM(NRR)and M(ORR) and using a silicon precursor expressed by HSi(NRR). Each of 'R', 'R', &#x201c;R&#x201d;, &#x201c;R&#x201d;, and &#x201c;R&#x201d; are hydrogen or hydrocarbon; &#x201c;R&#x201d; is different than &#x201c;R&#x201d; and &#x201c;R&#x201d;; &#x201c;x&#x201d; is in the range of 3 to 5; &#x201c;y&#x201d; is in the range of 1 to 4; &#x201c;z&#x201d; is in the range of 2 to 3; and &#x201c;M&#x201d; is a metal. The dielectric layer is a metal silicate layer or a metal nitride layer doped with silicon.

Methods of forming a layer

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Suwon-si, South Korea

Chayoung Yoo