Taiwan Semiconductor Manufacturing Comp. Ltd.

Chaucer Chnug

Yuan-Chang Huang

Jiunn-Der Yang

A method forming sidewall spacers on a semiconductor substrate without using the conventional plasma etching method is disclosed. In the method, a semiconductor substrate that has a gate structure formed on a top surface is first provided, followed by the deposition of a dielectric material layer on top of the semiconductor substrate. The substrate is then rotated to a rotational speed of at least 50 rpm, and an acid vapor is flown onto the substrate until the sidewall spacers are formed. The dielectric material layer for forming the sidewall spacers may be SiO , SiON or Si N . The acid vapor utilized may be formed from an acid of HF, H PO , H SO or HCl. In a preferred embodiment, the semiconductor substrate may be rotated to a rotational speed between about 100 rpm and about 150 rpm for a time period between about 10 sec. and about 20 sec.

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Hsinchu, Taiwan

Chaucer Chnug