Aerodyne Research, Inc.

Charter D Stinespring

Andrew Freedman

Disclosed herein is a process for producing a thin film of epitaxial material on a substrate surface at low temperatures under ultrahigh vacuum conditions. In general, precursor compounds are deposited, and converted into the epitaxial material, on the substrate surface at a temperature at which they undergo no substantial dissociation. By way of example, a beam-deposited admixture of dimethyl tellurium and dimethyl cadmium is efficiently converted to an epitaxial cadmium telluride crystal on the surface of a GaAs(100) substrate placed in an ultrahigh vacuum chamber by low power, 193 nm laser irradiation (pulse fluence approximately 6 mJ cm.sup.-2) at substrate temperature of -150.degree. C. and by subsequent annealing at 200.degree. C. for 30 seconds. In addition to efficient use of precursors, this process also permits considerable improvement of pattern resolution.

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Arthurdale, WV, United States of America

Charter D Stinespring