Soitec

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Charlotte Drazek

Djamel Belhachemi

Rainer Klaus Krause

Cécile Aulnette

Frank Dimroth

Eric Guiot

Eric Mazaleyrat

A method is used to prepare the remainder of a donor substrate, from which a layer has been removed by delamination in a plane weakened by ion implantation. The remainder comprises, on a main face, an annular step corresponding to a non-removed part of the donor substrate. The method comprises the deposition of a smoothing oxide on the main face of the remainder in order to fill the inner space defined by the annular step and to cover at least part of the annular step, as well as heat treatment for densification of the smoothing oxide. A substrate is produced by the method, and the substrate may be used in subsequent processes.

Method for preparing the remainder of a donor substrate, substrate produced by said method, and use of such a substrate

This disclosure relates to a solar cell assembly structure for supporting a concentrator photovoltaic cell comprising a semiconducting structure and a diode, wherein the semiconducting structure comprises a first semiconducting region at least a part of which for placing the concentrator photovoltaic cell structure, and a second semiconducting region for realizing the diode within or on the second semiconducting region and wherein the part of the first semiconducting region for placing the concentrator photovoltaic cell structure and the second semiconducting region are not vertically overlapping.

Advanced CPV solar cell assembly process

Growing community of inventors

Grenoble, France

Charlotte Drazek