Rohm & Haas Electronic Materials LLC

Charlotte A Cutler

James F Cameron

Shintaro Yamada

Suzanne M Coley

Paul J LaBeaume

Li Cui

Mingqi Li

Owendi Ongayi

Christopher P Sullivan

William Williams, Iii

Iou-Sheng Ke

Daniel Greene

Seokho Kang

Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.

Silicon-containing underlayers

Method using silicon-containing underlayers

Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising one or more condensed polymers having an organic polymer chain having pendently-bound moieties having an acidic proton and a pKa in water from &#x2212;5 to 13 and having pendently-bound siloxane moieties are provided.

Wet-strippable underlayer compositions comprising one or more silicon-containing polymers comprising a backbone comprising Si&#x2014;O linkages, one or more organic blend polymers, and a cure catalyst are provided. These compositions are useful in the manufacture of various electronic devices.

Wet-strippable antireflective compositions comprising one or more silicon-containing polymers that are free of Q-monomers and hydridosilanes as polymerized units are provided. These compositions are useful in the manufacture of various electronic devices.

Wet-strippable silicon-containing antireflectant

Provided are methods of forming photolithographic patterns using a negative tone development process. Also provided are coated substrates and electronic devices formed by the methods. The methods find particular applicability in the manufacture of electronic devices.

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Hopkinton, MA, United States of America

Charlotte A Cutler