Triquint Technology Holding Co.

Triquent Technology Holding, Co.

Charles William Lentz

Abdallah Ougazzaden

George John Przybylek

David Gerald Coult

Yuliya Anatolyevna Akulova

Kenneth Gerard Glogovsky

Padman Parayanthal

Mark S Hybertsen

Bettina A Nechay

Charles H Joyner

Joseph Michael Freund

Gustav Edward Derkits, Jr

Utpal Kumar Chakrabarti

Sung-Nee George Chu

John M Geary

Michael Geva

Frank Stephen Walters

Bernard Caras

Gleb E Shtengel

Thomas Gordon Beck Mason

Claude Lewis Reynolds, Jr

Debra L Waltemyer

Gustav E Derkits

Bryan P Segner

The present invention provides an optoelectronic device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optoelectronic device may include creating a multilayered optical substrate and then forming a self aligned dual mask over the multilayered optical substrate. The method may further include etching the multilayered optical substrate through the self aligned dual mask to form a mesa structure.

Optoelectronic device and method of manufacture thereof

An optical modulator includes first and second modulator segments. The first and second modulator segments form an optical signal path for an optical signal. The optical modulator also includes an electrical signal path capable of receiving and carrying a modulation signal, which is applied to the optical signal at the first and second modulation segments to generate a modulated optical signal. An inductive element may be disposed between electrical inputs to the first and second modulator segments. The optical modulator may be an electro-absorption modulator (EAM). The inductive element may be an inductor or a transmission line segment.

Segmented modulator for high-speed opto-electronics

The invention is an optoelectronic device and method of fabrication where at least two optical devices are formed on a single semiconductor substrate, with each optical device including an active region such as a multi-quantum well region. The active devices are spatially separated and optically coupled by a passive waveguide formed over the substrate which provides butt joints with the active regions. The butt joints can be optimized independently from the active regions thus improving yield.

Integrated optoelectronics devices

The present invention provides an optoelectronic device, a method of manufacture thereof, and an optical communication system including the same. The optoelectronic device may include, in one particular embodiment, an active device located over a substrate and a passive device located proximate the active device and over the substrate. The optoelectronic device may further include a doped cladding layer located over the active and passive devices and a barrier layer located over the doped cladding layer and the passive device.

Optoelectronic device having a barrier layer associated therewith and a method of manufacture thereof

A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffuision of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs

The present invention provides an optoelectronic device that includes an optical active layer formed over a substrate and an active region formed in the optical active layer. The optoelectronic device further includes a P-contact and an N-contact formed over a same side of the substrate and associated with the active region, the N-contact is located within a trench formed in the optical active layer and contacts the substrate within the trench.

Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor

A barrier layer is formed within a microfabricated device, such as a semiconductor laser assembly. The barrier layer is used to separate bonding material from an underlying layer that is located beneath the barrier layer. The barrier layer includes at least three thin layers that have alternating levels of electronegativity. Therefore, a significant amount of intermetallics are formed between the thin layers, thereby creating strong bonds between the thin layers at relatively low temperatures. It is difficult for the bonding material to break the strong bonds of the thin layers, and the bonding material is, therefore, prevented from penetrating the barrier layer and reacting with the underlying layer.

Barrier layer and method of making the same

A mesa stripe buried heterostructure semiconductor laser with no intediffusion of atoms between doped regions and a method of its formation are disclosed. A double dielectric mask is used to form the mesa stripe. The first mask is then partially etched and a Si-doped InP layer is selectively grown. The first and second mask are subsequently etched away and an InP(Zn) clad layer, along with a Zn-doped InGaAs contact layer, are formed. This way, the resulting structure has no contact between the InP(Zn) clad layer and the InP(Fe) layer, and the dopant atoms interdiffusion is suppressed.

Method and device for preventing zinc/iron interaction in a semiconductor laser

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Reading, PA, United States of America

Charles William Lentz