Orthogonal, Inc.

Eastman-kodak Company

Charles Warren Wright

Douglas Robert Robello

Diane Carol Freeman

Frank Xavier Byrne

John Andrew DeFranco

Terrence Robert O'Toole

Sandra Rubsam

Francis Michael Houlihan

Meng Zhao

Stephen A Godleski

Paul P Spara

Joan C Potenza

James J Seifert

Chang K Kim

Kenneth Nicholas Boblak

John E Leary, Jr

Marshall L Vandewalle

A photosensitive composition is disclosed including a fluorinated photo cross-linkable polymer provided in a fluorinated solvent such as a hydrofluoroether. The photo cross-linkable polymer includes a first repeating unit having a fluorine-containing group but not a cinnamate group, and a second repeating unit having a fluorine-containing cinnamate group. The polymer has a total fluorine content in a range of 30 to 60% by weight. The composition can be used to form patterned barrier or dielectric structures over substrates and devices such as organic electronic devices.

Cross-linkable fluorinated photopolymer

A method of making a device includes providing a fluorinated material layer over the device substrate having one or more target areas for patterning. One or more lift-off structures are formed at least in part by developing a first pattern of one or more open areas in the fluorinated material layer in alignment with the one or more target areas by contact with a developing agent including a fluorinated solvent which dissolves the fluorinated material at a first rate. After patterning, the lift-off structures are removed by contact with a lift-off agent including a fluorinated solvent wherein the lift-off agent dissolves the fluorinated material at a second rate that is at least 150 nm/sec and higher than the first rate.

Photolithographic patterning of devices

A fluorinated photopolymer composition is disclosed having a branched copolymer provided in a fluorinated solvent. The copolymer includes a branching unit, a first repeating unit having a fluorine-containing group, and a second repeating unit having a solubility-altering reactive group. The branched fluorinated photopolymer composition is particularly suited for the fabrication of organic electronic and bioelectronic devices, or other devices having sensitive active organic materials.

Patterning devices using branched fluorinated photopolymers

A method of patterning a device includes forming a fluorinated photopolymer layer over a device substrate. The photopolymer layer has a lower portion proximate the device substrate and an upper portion distal the device substrate. The fluorinated photopolymer layer includes a radiation-absorbing dye and a fluorinated photopolymer having a solubility-altering reactive group. The photopolymer layer is exposed to patterned radiation to form exposed and unexposed areas in accordance with the patterned radiation and a developed structure is formed by removing unexposed areas using a developing agent that includes a first fluorinated solvent. The lower portion of the exposed area of the photopolymer layer has a dissolution rate in the developing agent that is at least 5 times higher than a dissolution rate for the upper portion.

Photolithographic patterning of electronic devices

Branched fluorinated photopolymers

A photosensitive composition comprises a fluorinated solvent, a photo-acid generator and a copolymer. The copolymer comprises at least three distinct repeating units, including a first repeating unit having a fluorine-containing group, a second repeating unit having an acid-catalyzed cross-linkable group, and a third repeating unit having a sensitizing dye. The composition is useful in the fabrication of electronic devices, especially organic electronic and bioelectronic devices.

A method of patterning a device comprises providing on a device substrate a layer of a fluorinated photopolymer comprising at least three distinct repeating units including a first repeating unit having a fluorine-containing group, a second repeating unit having an acid- or alcohol-forming precursor group, and a third repeating unit having a sensitizing dye. The photopolymer has a total fluorine content in a range of 15 to 60% by weight. The photopolymer layer is exposed to patterned light and contacted with a developing agent to remove a portion of exposed photopolymer layer in accordance with the patterned light, thereby forming a developed structure having a first pattern of photopolymer covering the substrate and a complementary second pattern of uncovered substrate corresponding to the removed portion of photopolymer. The developing agent comprises at least 50% by volume of a fluorinated solvent.

Fluorinated photoresist with integrated sensitizer

A photopolymer layer is formed on an organic device substrate and exposed to patterned radiation. The photopolymer layer includes a photopolymer comprising at least a first repeating unit having an acid-catalyzed, solubility-altering reactive group, wherein the total fluorine content of the photopolymer is less than 30% by weight. The pattern exposed photopolymer is contacted with a developing agent, such as a developing solution, to remove unexposed photopolymer, thereby forming a developed structure having a first pattern of exposed photopolymer covering the substrate and a complementary second pattern of uncovered substrate corresponding to the unexposed photopolymer. The developing agent comprises at least 50% by volume of a hydrofluoroether developing solvent.

Method of patterning a device

A photosensitive composition useful for fabricating organic electronic devices comprises a fluorinated solvent a fluorinated sensitizing dye and a copolymer. The copolymer comprises at least two distinct repeating units, including a first repeating unit having a fluorine-containing group and a second repeating unit having a solubility-altering reactive group. The presence of the fluorinated sensitizing dye improves photosensitivity.

Fluorinated photopolymer with fluorinated sensitizer

A fluorinated photopolymer is formed on a device substrate and exposed to patterned radiation. The photopolymer has a total fluorine content in a weight range of 15 to 60% and comprises at least three distinct repeating units, including a first repeating unit having a fluorine-containing group, a second repeating unit having an acid- or alcohol-forming precursor group, and a third repeating unit different from the first and second repeating units. The pattern-exposed photopolymer layer is contacted with a developing solution comprising at least a first fluorinated solvent that dissolves the unexposed photopolymer thereby forming a developed structure having a first pattern of photopolymer covering the substrate and a complementary second pattern of uncovered substrate. The developing solution is selected to provide a maximum photopolymer contrast in a range of 1.9 to 5.0.

Disclosed is a process comprising reacting a primary alcohol sulfone with a reducing agent and a halogenating agent in the presence of an amide compound present in an amount of less than 1 part amide per part of primary alcohol sulfone to form a vinylsulfone.

Growing community of inventors

Fairport, NY, United States of America

Charles Warren Wright