International Business Machines Corporation

Macronix International Co., Ltd.

Hitachi Global Storage Technologies Netherlands B.v.

Jsr Corporation

Charles Thomas Rettner

Joy Cheng

Daniel Sanders

Ho-Cheol Kim

Kafai Lai

Gary Miles McClelland

Wai-Kin Li

Russell Alan Budd

Young-Hye Na

Vivekananda P Adiga

Sang-Min Park

Ratnam Sooriyakumaran

Elbert Emin Huang

Barry C Stipe

Linda Karin Sundberg

Mark Whitney Hart

Simone Raoux

William Dinan Hinsberg

Jed Walter Pitera

Christie R K Marrian

Da Yang

Alejandro Gabriel Schrott

Hemantha Kumar Wickramasinghe

Bruce David Terris

Yi-Chou Chen

David C Mckay

Frances Anne Houle

Kumar R Virwani

Sarah Elizabeth Sheldon

Michael Justin Beckley

Robert G Biskeborn

Chung H Lam

Shu-Jen Han

Calvin S Lo

Rudy J Wojtecki

Kenneth Parker Rodbell

Stephen McConnell Gates

Chi-Chun Liu

Damon B Farmer

Dieter Klaus Weller

Matthew Warren Copel

Pawan Raghunath Chowdhary

Mahesh Govind Samant

Hoa D Truong

Donald Stimson Bethune

Hayato Namai

Timothy Phung

Harry Jonathon Mamin

Teya Topuria

Alexander M Friz

Philip M Rice

Hareem Tariq Maune

Mary Elizabeth Rothwell

Noel Arellano

Bulent Nihat Kurdi

William Paul Risk

Manfred Albrecht

Gregory S Doerk

Hermantha K Wickramasinghe

Ralph G Devoe

Leslie E Thompson

Brian Lin

Leonidas Ernesto Ocola

Thomas Thomson

Christie Roderick Kingsley Marrian

Christian Kurtsiefer

Daniel Paul Sanders

Wai-Kim c/o Ibm United Kingdom Limited Li

Devices and/or computer-implemented methods to facilitate a programmable and/or reprogrammable quantum circuit are provided. According to an embodiment, a device can comprise a superconducting coupler device having a superconducting fuse device that is used to alter the coupling of a first quantum computing element and a second quantum computing element.

Programmable and reprogrammable quantum circuit

A method of constructing a superconducting switch includes depositing a thin sacrificial layer on top of a substrate. The sacrificial layer is patterned to remove portions of the sacrificial layer except at a first portion of the substrate. A superconducting metal layer is patterned on top of the substrate and on top of the sacrificial layer. The superconducting metal layer is patterned to form a superconducting metal line over the sacrificial layer. The patterned sacrificial layer is etched from under the superconducting metal line to release the metal line from the substrate.

Anti-fuse and fuse structures for improving the functionality of qubit circuits

Systems and techniques that facilitate trimmable inductors for qubit frequency tuning are provided. In various embodiments, a device can comprise a Josephson junction. In various aspects, the Josephson junction can be shunted by a capacitor, and a trimmable inductor can couple the Josephson junction to a pad of the capacitor. In various cases, the trimmable inductor can comprise a first conductive path that includes a severable and/or weldable superconducting bridge and a second conductive path that is in parallel with the first conductive path. In various aspects, severing and/or welding the severable and/or weldable superconducting bridge can controllably change an inductance of the trimmable inductor, which can commensurately change a resonant frequency of a qubit formed by the Josephson junction and the capacitor.

Trimmable inductors for qubit frequency tuning

Embodiments are provided for fabrication of superconducting devices using area-selective deposition of a metal nitride. In some embodiments, a method can include providing a thermally treated carbon layer, and selectively depositing a metal nitride using the thermally treated carbon layer for formation of a superconducting device.

Area-selective deposition of metal nitride to fabricate devices

Techniques regarding lithographic processes for fabricating Josephson junctions are provided. For example, one or more embodiments described herein can comprise a method that can include depositing a first resist layer onto a second resist layer. The first resist layer can include a bridge portion that defines an opening for forming a Josephson junction. The method can also comprise depositing a third resist layer onto the bridge portion. The third resist layer can shield the opening from an angled deposition of a superconducting material during fabrication of the Josephson junction.

Lithography for fabricating Josephson junctions

Embodiments relate to a system, program product, and method for use and an artificial intelligence (AI) platform to identify and analyze physical forces related to sensory input. A sensor operatively coupled to an inertial measurement unit (IMU) is activated. An initial position of the IMU responsive to the sensor activation is captured and movement of the IMU from the initial position is recognized. A comparison is preformed, where the captured initial position is compared to a second position which is correlated with the recognized movement. A score based on the performed comparison is determined and a diagnostic assessment based on the performed comparison and determined score is created. The diagnostic assessment is converted to feedback, where the conversion utilizes real-time communication of an instruction of a second movement position of the IMU. Receipt of the feedback physically conveys a manifestation of the feedback to the apparatus.

Interactive exercise experience

A crosslinked self-assembled monolayer (SAM), comprising surface groups containing a nitrogen-heterocycle, was formed on an oxygen plasma-treated silicon oxide or hafnium oxide top surface of a substrate. The SAM is covalently bound to the underlying oxide layer. The SAM was patterned by direct write methods using ultraviolet (UV) light of wavelength 193 nm or an electron beam, forming a line-space pattern comprising non-exposed SAM features. The non-exposed SAM features non-covalently bound DNA-wrapped carbon nanotubes (DNA-CNT) deposited from aqueous solution with a selective placement efficiency of about 90%. Good alignment of carbon nanotubes to the long axis of the SAM features was also observed. The resulting patterned biopolymer features were used to prepare a CNT based field effect transistor.

Nitrogen heterocycle-containing monolayers on metal oxides for binding biopolymers

A chromium oxide film is formed at room temperature. The chromium oxide film has at least one partially polycrystalline portion and/or at least one amorphous portion depending upon the substrate(s) over which the chromium oxide film is formed. Partially polycrystalline portion(s) of the chromium oxide film are exposed, at room temperature, to an electron beam that has an accelerating voltage of at least 100 kilovolts to further crystallize the partially polycrystalline portion(s). Amorphous portion(s) of the chromium oxide film are exposed, at room temperature, to an electron beam that has an accelerating voltage of more than 100 kilovolts to crystallize the amorphous portion(s).

Hardening chromium oxide films in a magnetic tape head and other structures

Methods and computer program products for designing topographic patterns for directing the formation of self-assembled domains at specified locations on substrates. The methods include generating mathematical models that operate on mathematical descriptions of the number and locations of cylindrical self-assembled domains in a mathematical description of a guiding pattern.

Method for designing topographic patterns for directing the formation of self-assembled domains at specified locations on substrates

A chemical pattern layer including an orientation control material and a prepattern material is formed over a substrate. The chemical pattern layer includes alignment-conferring features and additional masking features. A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component is removed selective to a second polymeric block component by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.

Formation of a composite pattern including a periodic pattern self-aligned to a prepattern

A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.

Method for designing optical lithography masks for directed self-assembly

Methods are disclosed for forming a layered structure comprising a self-assembled material. An initial patterned photoresist layer is treated photochemically, thermally, and/or chemically to form a treated patterned photoresist layer comprising a non-crosslinked treated photoresist. The treated photoresist is insoluble in an organic solvent suitable for casting a material capable of self-assembly. A solution comprising the material capable of self-assembly dissolved in the organic solvent is casted on the treated layer, and the organic solvent is removed. The casted material is allowed to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material. The treated photoresist can be removed using an aqueous base and/or a second organic solvent.

Methods of directed self-assembly and layered structures formed therefrom

Methods are disclosed for forming topographical features. In one method, a pre-patterned structure is provided which comprises i) a support member having a surface and ii) an element for topographically guiding segregation of a polymer mixture including a first polymer and a second polymer, the element comprising a feature having a sidewall adjoined to the surface. The polymer mixture is disposed on the pre-patterned structure, wherein the disposed polymer mixture has contact with the sidewall and the surface. The first polymer and the second polymer are segregated in a plane parallel to the surface, thereby forming a segregated structure comprising a first polymer domain and a second polymer domain. The first polymer domain and/or the second polymer domain are lithographically patterned, thereby forming topographical features comprising at least one of i) a first feature comprising a lithographically patterned first polymer domain and ii) a second feature comprising a lithographically patterned second polymer domain.

Methods of forming topographical features using segregating polymer mixtures

A method of forming a block copolymer pattern comprises providing a substrate comprising a topographic pre-pattern comprising a ridge surface separated by a height, h, greater than 0 nanometers from a trench surface; disposing a block copolymer comprising two or more block components on the topographic pre-pattern to form a layer having a thickness of more than 0 nanometers over the ridge surface and the trench surface; and annealing the layer to form a block copolymer pattern having a periodicity of the topographic pre-pattern, the block copolymer pattern comprising microdomains of self-assembled block copolymer disposed on the ridge surface and the trench surface, wherein the microdomains disposed on the ridge surface have a different orientation compared to the microdomains disposed on the trench surface. Also disclosed are semiconductor devices.

Method of forming self-assembled patterns using block copolymers, and articles thereof

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San Jose, CA, United States of America

Charles Thomas Rettner