Alliance for Sustainable Energy, LLC

Ledvance Gmbh

Charles Teplin

Howard M Branz

Anthony W Catalano

Steven S Davis

Anthony N McDougle

Qi Wang

Pauls Stradins

Paul Stradins

This disclosure describes systems, methods, and apparatus for a combined LED driver and emergency backup battery system. The LED driver can include current regulation circuitry as well as a bus enabling charging and discharging of an energy storage device from and to the bus. A master controller can control charging and discharging of the energy storage device via a controller of an energy storage management system, and also communicate with the current regulation circuitry to control a balance of power between an AC mains, the energy storage device, and driving of an LED light source. Accessories may be coupled to the bus and receive low voltage power from the bus and optionally receive commands from the master controller and provide sensed data back to the controller. A wireless network interface to the master controller can enable system states based on electrical power company indications and instructions.

LED lighting system with battery for demand management and emergency lighting

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Epitaxial growth of silicon for layer transfer

A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

Back contact to film silicon on metal for photovoltaic cells

A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

Growing community of inventors

Boulder, CO, United States of America

Charles Teplin