Applied Materials, Inc.

Varian Semiconductor Equipment Associates, Inc.

Sokudo Co., Ltd.

Charles T Carlson

William Tyler Weaver

Jeffrey C Hudgens

Robert Brent Vopat

Jason M Schaller

Robert B Lowrance

David T Blahnik

Aaron Webb

Michael Robert Rice

Frank Sinclair

Jay D Pinson, Ii

Benjamin B Riordon

Mohsen Salek

Helen R Armer

Tetsuya Ishikawa

Harald Herchen

Paul J Murphy

Leon Volfovski

David H Quach

Chongyang Wang

Rick J Roberts

John A Backer

Eric Andrew Englhardt

Vinay K Shah

Dean C Hruzek

James D Strassner

Michael C Kuchar

Luke W Bonecutter

Kirk Van Katwyk

Van Hoskins

Michael Honan

Mike Rice

Costel Biloiu

Brian C Lue

Jeffrey Charles Blahnik

Malcolm N Daniel, Jr

Dave Silvetti

Krag R Senior

Morgan Evans

Rutger Meyer Timmerman Thijssen

Paul Zachary Wirth

Karuppasamy Muthukamatchi

Jeff Hudgens

Steve S Hongkham

Ross Bandy

Michael Carrell

Brian Lu

Christopher Neil Grant

Tuan Anh Nguyen

William Davis Lee

Timothy J Miller

Nicholas P T Bateman

Swaminathan T Srinivasan

Jacob Newman

Paul E Pergande

Andrew J Constant

Rajkumar Thanu

Khokan Chandra Paul

Mario David Silvetti

Shay Assaf

Juan Carlos Rocha-Alvarez

Joseph C Olson

Anantha K Subramani

James S Papanu

Timothy Joseph Franklin

Dmitry A Dzilno

Jean Delmas

Lawrence Randolph Gravell

Paul Sullivan

James Paul Buonodono

Nicholas Pt Bateman

Paul Forderhase

Gary Wyka

Wai-Ming Tam

Stephen Hickerson

Nalin Patadia

Tammy Jo Pride

Ryan Magee

Penchala N Kankanala

Wyland L Atkins

Mitchell DiSanto

Siva Chandrasekar

John J Rosato

Jaime A Carrera

Scott A Smith

Scott Meyer

Douglas Richards

Evanson G Baiya

Venkata Raghavaiah Chowdhary Kode

William Herron Park, Jr

Luke Bonecutter

Luigi G Amato

Paul Lester

Constantin Predoaica

Chris Czajka

Michael A Beck

Michael C Simmons

An ion implantation system including an ion source for generating an ion beam, an end station for holding a substrate to be implanted by the ion beam, and a linear accelerator disposed between the ion source and the end station and adapted to accelerate the ion beam, the linear accelerator comprising at least one acceleration stage including a resonator coil coupled to a drift tube assembly, the drift tube assembly including a first drift tube coupled to a first end of a first insulting rod via interference fit, a second drift tube coupled to a first end of a second insulting rod via interference fit, and a mounting bracket coupled to a second end of the first insulting rod and to a second end of the second insulting rod via interference fit.

Method of assembling drift tube assemblies in ion implantors

A system for transferring semiconductor workpieces from a load lock to an orientation station and on to a platen is disclosed. The system comprises two load locks, two robots, and one orientation station. Each robot is associated with a respective load lock and follows a fixed sequence. The robot returns a processed workpiece to the load lock and also removes an unprocessed workpiece. The robot then moved to the orientation station, where it removes an aligned workpiece from the orientation station and deposits the unprocessed workpiece on the orientation station. Next, the robot moves to the platen, where it removes a processed workpiece and deposits the aligned workpiece. The robot then returns to the load lock and repeats this sequence.

Workpiece handling architecture for high workpiece throughput

A system for transferring semiconductor workpieces from a load lock to an orientation station and onto a platen is disclosed. The system comprises two load locks, a multi-workpiece orientation station, two multi-pick robots that transfer a plurality of workpieces between a respective load lock and the multi-workpiece orientation station, and two backend robots that transfer individual workpieces between the multi-workpiece orientation station and the platen.

An ion implantation system including an ion source for generating an ion beam, an end station for holding a substrate to be implanted by the ion beam, and a linear accelerator disposed between the ion source and the end station and adapted to accelerate the ion beam, the linear accelerator including at least one acceleration stage including a resonator and a resonator coil disposed within a resonator chamber, wherein the resonator coil is a tubular body having a plurality of coaxial layers, including an inner layer, a middle layer, and an outer layer, wherein the outer layer is formed of a dielectric material.

Three layer resonator coil for linear accelerator

Embodiments herein are directed to a linear accelerator assembly for an ion implanter. In some embodiments, a LINAC may include a coil resonator and a plurality of drift tubes coupled to the coil resonator by a set of flexible leads.

Linear accelerator assembly including flexible high-voltage connection

Apparatus and methods to process one or more wafers are described. The apparatus comprises a chamber defining an upper interior region and a lower interior region. A heater assembly is on the bottom of the chamber body in the lower interior region and defines a process region. A wafer cassette assembly is inside the heater assembly and a motor is configured to move the wafer cassette assembly from the lower process region inside the heater assembly to the upper interior region.

Processing chamber with annealing mini-environment

An apparatus may include a resonator chamber, arranged in a vacuum enclosure; an RF electrode assembly, arranged within the vacuum enclosure; and a resonator coil, disposed within the resonator chamber, the resonator coil having a high voltage end, directly connected to at least one RF electrode of the RF electrode assembly.

Resonator, linear accelerator, and ion implanter having dielectric-free resonator chamber

Exemplary substrate processing systems may include a transfer region housing defining a transfer region fluidly coupled with a plurality of processing regions. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft counter-rotatable with the first shaft. The transfer apparatus may include an eccentric hub extending at least partially through the central hub, and which is radially offset from a central axis of the central hub. The transfer apparatus may also include an end effector coupled with the eccentric hub. The end effector may include a plurality of arms having a number of arms equal to the number of substrate supports of the plurality of substrate supports.

Robot for simultaneous substrate transfer

An exciter for a high frequency resonator. The exciter may include an exciter coil inner portion, extending along an exciter axis, an exciter coil loop, disposed at a distal end of the exciter coil inner portion. The exciter may also include a drive mechanism, including at least a rotation component to rotate the exciter coil loop around the exciter axis.

Resonator, linear accelerator configuration and ion implantation system having rotating exciter

Exemplary substrate processing systems may include a factory interface and a load lock coupled with the factory interface. The systems may include a transfer chamber coupled with the load lock. The transfer chamber may include a robot configured to retrieve substrates from the load lock. The systems may include a chamber system positioned adjacent and coupled with the transfer chamber. The chamber system may include a transfer region laterally accessible to the robot. The transfer region may include a plurality of substrate supports disposed about the transfer region. Each substrate support of the plurality of substrate supports may be vertically translatable. The transfer region may also include a transfer apparatus rotatable about a central axis and configured to engage substrates and transfer substrates among the plurality of substrate supports. The chamber system may also include a plurality of processing regions vertically offset and axially aligned with an associated substrate support.

High-density substrate processing systems and methods

Described are isolation valves, and chamber systems incorporating and methods of using the isolation valves. In some embodiments, an isolation valve may include a valve body and a flapper assembly. The valve body may define a first fluid volume, a second fluid volume, and a seating surface. The flapper assembly may include a flapper disposed inside the valve body having a flapper surface complimentary to the seating surface. The flapper may be pivotable within the valve body to a first position such that the flapper surface may be away from the seating surface to allow fluid flow between the first fluid volume and the second fluid volume. The flapper may be pivotable within the valve body to a second position such that the flapper surface may be proximate the seating surface to form a non-contact seal to restrict fluid flow between the first fluid volume and the second fluid volume.

Isolation valve

Embodiments herein are directed to a linear accelerator assembly for an ion implanter, wherein the linear accelerator includes a jacketed resonator coil. In some embodiments, a linear accelerator assembly may include a first fluid conduit and a coil resonator coupled to the first fluid conduit, wherein the coil resonator is operable to receive a first fluid via the first fluid conduit, wherein the coil resonator comprises a first coil conduit adjacent a second coil conduit, and wherein a first fluid channel defined by the first coil conduit is operable to receive the first fluid.

Linear accelerator coil including multiple fluid channels

Exemplary substrate processing systems may include a transfer region housing defining an internal volume. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft concentric with and counter-rotatable to the first shaft. The transfer apparatus may include a first end effector coupled with the first shaft. The first end effector may include a plurality of first arms. The transfer apparatus may also include a second end effector coupled with the second shaft. The second end effector may include a plurality of second arms having a number of second arms equal to the number of first arms of the first end effector.

A coil inductor for use with a LINAC is disclosed. The coil inductor comprises one or more tubes, wherein each tube comprises an interior support structure to strengthen the tubes. By supporting the tube, the amount of vibration is reduced, allowing the coil to resonate at its natural frequency. In some embodiments, the interior structure comprises one or more interior walls. These interior walls may be used to create a plurality of fluid channels that allow the flow of coolant through the tubes. An end cap may be disposed on the second end of the tubes to allow fluid communication between the supply fluid channels and the return fluid channels. The first ends of the one or more tubes may be connected to a manifold that includes a supply port and a return port for the passage of coolant.

Stiffened RF LINAC coil inductor with internal support structure

Growing community of inventors

Cedar Park, TX, United States of America

Charles T Carlson