Element Six Gmbh

Joy Global Underground Mining LLC

Element Six Technologies Limited

Charles Simon James Pickles

Christopher John Howard Wort

Neil Perkins

Geoffrey Alan Scarsbrook

John Robert Brandon

Li Jiang

Timothy Peter Mollart

Joseph Michael Dodson

Clive Edward Hall

Carlton Nigel Dodge

Steven Edward Coe

Alexander Lamb Cullen

Paul Nicolas Inglis

Richard Antonius Kleijhorst

Randy Arnold

John R Frederick

James Krellner

Christopher Wort

David Meade

Bulent Tiryaki

Serena Bonetti

Bernd Heinrich Ries

James E Folkerts

Markus Kilian Scharting

John Hallberg

Peter Robert Bush

A method of coating a non-refractory and/or non-planar substrate () with synthetic diamond material using a microwave plasma chemical vapour deposition (CVD) synthesis technique, the method comprising: forming a composite substrate assembly () comprising: a support substrate () comprising an upper surface; one or more electrically conductive refractory guards () disposed over the upper surface of the support substrate and extending to a height habove the upper surface of the support substrate; and one or more non-refractory and/or non-planar substrates disposed over the upper surface of the support substrate and extending to a height habove the upper surface of the support substrate, wherein the height his less than the height h, wherein a difference in height h&#x2212;hlies in a range 0.2 mm to 10 mm; placing the composite substrate assembly within a plasma chamber of a microwave plasma CVD reactor; feeding process gases into the plasma chamber including a carbon containing gas and a hydrogen containing gas; feeding microwaves in the plasma chamber to form a microwave plasma at a location over the composite substrate assembly; and growing synthetic diamond material on the one or more non-refractory and/or non-planar substrates.

Method for making diamond layers by CVD

A cutting bit assembly for a mining machine includes a holder having a first surface, a second surface, and a bore extending therebetween, and a bit having a first end and a second end. The bit further includes a tip, a shank, and a shoulder positioned between the tip and the shank. The shank is positioned in the bore of the holder and defines a shank axis. The shoulder engages the first surface of the holder. The shank includes a projection adjacent the second end. The cutting bit assembly also includes a retainer having a groove and a resilient member. The groove engages a portion of the projection. The resilient portion engages the second surface of the holder and biases the retainer along the shank axis and away from the holder.

Cutting bit assembly

The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.

Microwave plasma reactors and substrates for synthetic diamond manufacture

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric Eelectric field profile across the growth surface in use, the localized axisymmetric Eelectric field profile comprising a substantially flat central portion bound by a ring of higher electric field, the substantially flat central portion extending over at least 60% of an area of the growth surface of the substrate and having an Eelectric field variation of no more than &#xb1;10% of a central Eelectric field strength, the ring of higher electric field being disposed around the central portion and having a peak Eelectric field strength in a range 10% to 50% higher than the central Eelectric field strength.

A microlectrode comprising a diamond layer formed from electrically non-conducting diamond and containing one or more pins or projections of electrically conducting diamond extending at least partially through the layer of non-conducting diamond presenting areas of electrically conducting diamond.

Diamond microelectrodes

A rigid three-dimensional component such as a speaker dome is formed of diamond, preferably fabricated to net shape by CVD diamond synthesis, and includes a coating on one or more major surfaces thereof. The coating is designed to enhance the performance and/or to alter the appearance of the component. In particular, the coating is designed to act as a damping medium and/or provide aesthetic qualities to the component.

Coated speaker dome

A microelectrode comprising a diamond layer formed from electrically non-conducting diamond and containing one or more pins or projections of electrically conducting diamond extending at least partially through the layer of non-conducting diamond and presenting areas of electrically conducting diamond.

Growing community of inventors

Ascot, United Kingdom

Charles Simon James Pickles