Honeywell International Inc.

Motorola Corporation

Honeywell G.m.b.h.

Solavolt International

Charles S Chanley

Kalluri R Sarma

T Bruce Koger

Jonathan J Bernstein

An active matrix display includes an annealed flexible dielectric substrate, a thin-film-transistor (TFT), a pixel electrode, and an interconnect. The annealed substrate includes at least a first surface and a second surface. The TFT is formed on the annealed flexible dielectric substrate first surface. The pixel electrode is formed on the annealed flexible dielectric substrate first surface. The interconnect is formed on the annealed flexible dielectric substrate, and includes a conductor having an interconnect contact and a pixel electrode contact formed thereon. The interconnect contact is electrically coupled to the TFT, and the pixel contact is electrically coupled to the pixel electrode.

Flexible active matrix display backplane and method

The present invention provides amorphous silicon thin-film transistors and methods of making such transistors for use with active matrix displays. In particular, one aspect of the present invention provides transistors having a structure based on a channel passivated structure wherein the amorphous silicon layer thickness and the channel length can be optimized. In another aspect of the present invention thin-film transistor structures that include a contact enhancement layer that can provide a low threshold voltage are provided.

Amorphous silicon thin-film transistors and methods of making the same

An active matrix display backplane is formed by annealing a flexible dielectric substrate, and then forming one or more thin-film-transistors (TFTs), one or more pixel electrodes, and an interconnect on a surface of the annealed substrate. The interconnect includes individual, spaced apart electrodes that are electrically coupled to one another. One of the interconnect electrodes is electrically coupled to a TFT, and the other interconnect electrode is electrically coupled to the pixel electrode, to thereby electrically interconnect the TFT and the pixel electrode.

The present invention is a back illuminated image array device and a method of constructing such a device. The device is generally comprised of an array circuitry layer, a front layer, and a quartz layer. The array circuitry layer is defined on one surface of the front layer. The quartz layer is mounted on the other surface of the front layer. The method of fabricating the device is generally comprised of the following steps. The method provides a wafer having a thick silicon layer, an oxide layer on the thick silicon layer, and a front silicon layer on the oxide layer. The front layer has a first surface and a second surface with the second surface proximal to the oxide layer. Array circuitry is formed on the first surface of the front layer. A temporary layer is applied to the surface of the array circuitry. The thick silicon layer and the oxide layers are removed from the wafer, thereby, exposing the second surface of the front layer. A quartz layer is applied to the second surface. The temporary layer is removed from the array surface.

Back illuminated imager with enhanced UV to near IR sensitivity

A method for fabricating single crystal islands on a high temperature substrate, thereby allowing for the use of high temperature processes to further make devices incorporating the islands such as, for example, high mobility thin film transistor integrated drivers for active matrix displays. The method essentially includes depositing an etch stop layer on a single crystal silicon substrate, depositing a single crystal silicon device layer on the etch stop layer, bonding a quartz substrate to the single crystal silicon device layer at room temperature, sealing and securing with an adhesive the edges of the single crystal silicon substrate, the etch stop layer, the single crystal silicon device layer and the quartz substrate, grinding away a portion of the silicon substrate and a portion of the adhesive, etching away the remaining portion of the silicon substrate, removing the remaining portion of the adhesive, etching away the etch stop layer, applying a photoresist mask on the single crystal silicon device layer for defining the islands on the single crystal silicon device layer, etching single crystal silicon islands, and then the first non-room-temperature process of diffusion bonding the single crystal silicon islands to the quartz substrate.

Single crystal silicon on quartz

A process is disclosed for fabricating a free-standing thin or thick film structure. One embodiment of the process includes the steps of providing a substrate of a first refractory material, forming a layer of carbon on the substrate, and depositing a film of a second refractory material on top of the layer of carbon. This sandwich structure is heated in an oxidizing ambient to cause the oxidation of the carbon layer leaving the second refractory material as a free-standing film.

Carbon film oxidation for free-standing film formation

An improved process is disclosed for the high pressure plasma hydrogenation of silicon tetrachloride. Hydrogen and silicon tetrachloride are reacted in the presence of a high pressure plasma and further in the presence of a boron catalyst to form trichlorosilane and dichlorosilane. By adding the boron catalyst the overall conversion efficiency is increased and the dichlorosilane content in the reaction effluent is increased.

Growing community of inventors

Scottsdale, AZ, United States of America

Charles S Chanley