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United States of America As Represented by the Secretary of the Air Force

Charles R Young

Fritz L Schuermeyer

Ge Yang

Hank Lin

Fritz L Schurmeyer

The embodied invention is an outer security door design that retrofits an existing sliding door. The door design comprises an outer frame which secures into the framework of an existing sliding door. An inner rotating security screen door then fits into the outer frame. The outer frame includes important support underneath the lower frame center point, as the weight of the rotating screen door provides higher stress at that location. The outer frame allows the screen door to be latched in the open or closed position.

Security screen door for sliding doors

Embodiments related to fast flip-flops are disclosed.

Method and apparatus for fast flip-flop

Portable cardiopulmonary resuscitation device with precise compression depth and uniformity, including a frame body and a compression mechanism associate with the frame body. The compression mechanism includes a handle and a connecting bar connected between the handle and a coupling seat. An adjusting bolt is passed through the coupling seat and movably screwed in a locating block. At least one movable sleeve is disposed on one side of, above or below the locating block. The movable sleeve slide along a retaining shaft which is vertically jointed to a fixing frame. A lower end of adjusting bolt is connected with a plunger. The other end of the coupling seat is further connected with another connecting bar which is connected to the frame body. Two sitting bars are connected between the two transverse beams of the frame body. When rescuing a victim, a rescuer can sit on the sitting bars with the rescuer's weight offsetting a reaction force produced in compression of the heart. The frame body can be associated with a base board which is fixed on an emergency litter, enabling a rescuer to perform cardiopulmonary resuscitation in a moving ambulance.

Portable cardiopulmonary resuscitation device with precise compression depth and uniformity

A nonvolatile memory cell is disclosed that has a buried n+ layer from which charge (electrons) is injected into the insulator of n-channel MNOS (Metal Nitride Oxide Semiconductor) type devices.

Nonvolatile punch through memory cell with buried n+ region in channel

A nonvolatile Charge Injection Device (NOVCID) of Metal-Nitride-Oxide-Semiconductor (MNOS) material is operated in a novel manner in combination with a flip-flop to provide a charge pumped volatile memory storage system that can be continuously nondestructively read and on command, by applying a high positive potential to the field plate of the NOVCID, the information stored in the volatile mode is transferred to the nonvolatile state. To recover the stored information an alternating current signal is applied to the field plate.

Quasi static, virtually nonvolatile random access memory cell

A high density, static, virtually nonvolatile, Random Access Memory (RAM) cell is disclosed in which variable threshold n-channel depletion mode Metal-Nitride-Oxide-Semiconductor (MNOS) transistors are the load devices for a pair of active, n-channel, enhancement mode, Insulated Gate Field Effect Transistors (IGFETs) in a flip-flop circuit. N-channel enhancement mode access transistors also IGFETs connect the cell to the bit line and the bit line. Information is written in, and read, in volatile form conventionally. A +25 volt, 10 msec pulse applied to the gates of the depletion mode MNOS load devices transfers the data from the volatile mode to the nonvolatile mode.

Virtually nonvolatile static random access memory device

A dynamic, virtually nonvolatile random access memory (RAM) storage cell is provided by storing information in a Nonvolatile Charge Injection Device (NOVCID), first in volatile form, then by an electric signal transferring the stored intelligence into a nonvolatile form from which it may late be recovered. Since only on external command is the information transferred into the nonvolatile storage mode, the memory is described as a virtually nonvolatile RAM.

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Xenia, OH, United States of America

Charles R Young