USA As Represented by Secretary of the Navy

Bae Systems Information and Electronic Systems Integration Inc.

Charles R Eddy, Jr

Francis J Kub

Michael Anthony Mastro

Travis J Anderson

David Kurt Gaskill

Rachael L Myers-Ward

Virginia D Wheeler

Jennifer K Hite

Neeraj Nepal

Nelson Garces

Robert E Stahlbush

Nadeemmullah A Mahadik

Karl D Hobart

Syed B Qadri

Theodore D Moustakas

Kanin Chu

Glenn Jernigan

Enrico Bellotti

Michael J Mehl

Brenda L VanMil

Liberty L Gunter

Martin C Peckerar

Boris N Feigelson

Mark E Twigg

Richard L Henry

Daniel D Koleske

Boris N Feygelson

Ronald T Holm

Scooter David Johnson

Alma E Wickenden

Sandra C Hangarter

Kok-Keong Lew

Jihyun Kim

Nadeemullah A Mahadik

Shahzad Akbar

Jaime A Freitas

Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300&#xb0; C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.

Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AIN at low temperatures

Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of InGaN, AlGaN, AlInN, or AlInGaN.

Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and GaN

A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.

Growth of crystalline materials on two-dimensional inert materials

A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas.

Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process

A method of: providing an off-axis 4H&#x2014;SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas.

Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures

Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.

Method for vertical and lateral control of III-N polarity

A method for reducing/eliminating basal plane dislocations from SiC epilayers is disclosed. An article having: an off-axis SiC substrate having an off-axis angle of no more than 6&#xb0;; and a SiC epitaxial layer grown on the substrate. The epitaxial layer has no more than 2 basal plane dislocations per cmat the surface of the epitaxial layer. A method of growing an epitaxial SiC layer on an off-axis SiC substrate by: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxially grow SiC on the substrate in the growth chamber. The substrate has an off-axis angle of no more than 6&#xb0;. The growth conditions include: a growth temperature of 1530-1650&#xb0; C.; a pressure of 50-125 mbar; a C/H gas flow ratio of 9.38&#xd7;10-1.5&#xd7;10; a C/Si ratio of 0.5-3; a carbon source gas flow rate during ramp to growth temperature from 0 to 15 sccm; and an electron or hole concentration of 10-10/cm.

Reduction of basal plane dislocations in epitaxial SiC

A structure having: a substrate and a diamond layer on the substrate having diamond nanoparticles. The diamond nanoparticles are formed by colliding diamond particles with the substrate. A method of: directing an aerosol of submicron diamond particles toward a substrate, and forming on the substrate a diamond layer of diamond nanoparticles formed by the diamond particles colliding with the substrate.

Diamond and diamond composite material

A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.

Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material

A device with complementary non-inverted N-channel and inverted P-channel field effect transistors comprising a layer grown epitaxially on a substrate, a barrier layer, a two-dimensional electron gas in the first III-Nitride epitaxial layer, a second III-Nitride material layer, and a two-dimensional hole gas in the second III-Nitride epitaxial layer. A device with complementary inverted N-channel and non-inverted P-channel field effect transistors comprising a nitrogen-polar III-Nitride layer grown epitaxially, a barrier material layer, a two-dimensional hole gas, and a two-dimensional electron gas in the second III-Nitride epitaxial layer. A method of making complementary inverted P-channel and non-inverted N-channel III-Nitride field effect transistors. A method of making a complementary non-inverted P-channel field effect transistor and inverted N-channel III-Nitride field effect transistor on a substrate.

Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-&#x3ba; oxide-based dielectric compounds such as AlO, HfO, TaO, or TiOare provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.

Epitaxial graphene surface preparation for atomic layer deposition of dielectrics

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Columbia, MD, United States of America

Charles R Eddy, Jr