Solarex Corporation

Charles R Dickson

David E Carlson

Robert V D'Aiello

Barry J Johnson

David B Gerhardt

Compounds having the formula (MX.sub.3).sub.n M'X.sub.4-n wherein M and M' are different Group 4A atoms, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive, are useful as deposition feedstock materials in the formation of hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices. Dopants having the formula (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorous, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof and m is an integer between 1 and 3, inclusive, are useful in the fabrication of negatively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices. Dopants having the formula YJX.sub.2 wherein Y is halogen or carbonyl, J is a Group 3A atom and X is hydrogen, halogen or mixtures thereof, are useful in the formation of positively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.

Deposition feedstock and dopant materials useful in the fabrication of

A method of forming laser-patterned conductive elements on a thin film of semiconductor material in a semiconductor device by fabricating a thin film of metal on the semiconductor material and scribing the semiconductor film along a desired pattern with a laser operated at a power density sufficient to ablate the semiconductor material along the desired pattern. The ablation of the semiconductor material produces gases that structurally weaken and burst through the metal film along the desired pattern to form gaps separating the metal film into a plurality of conductive elements, for example, back electrodes on a thin-film photovoltaic module. In a second embodiment, a method of forming a multi-cell thin-film semiconductor device with laser-patterned back electrodes includes the steps of fabricating a plurality of spaced-apart front electrodes on a substrate, fabricating a thin film of semiconductor material on the front electrodes, fabricating a thin film of metal on the semiconductor film, and scribing the metal film along a pattern of lines with a laser operated at a power density sufficient to melt the metal through the underlying semiconductor film and form electrical connections between the metal film and the front electrodes along the scribe lines. Multi-cell, thin-film amorphous silicon photovoltaic modules having back electrodes formed by the above methods also are disclosed.

Thin film semiconductor solar cell array and method of making

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Electrical contacts for a thin-film semiconductor device

Method for manufacturing electrical contacts for a thin-film

Compounds having the formula (MX.sub.3).sub.n M'X.sub.4-n wherein M and M' are different Group 4A atoms, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive, can be activated by dehydrogenation or dehalogenation. These compounds are useful as deposition feedstock materials in the formation of hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices. Dopants having the formula (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof and m is an integer between 1 and 3, inclusive, can be activated by dehydrogenation or dehalogenation. These compounds are useful in the fabrication of negatively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices. Dopants having the formula YJX.sub.2 wherein Y is halogen or carbonyl, J is a Group 3A atom and X is hydrogen, halogen or mixtures thereof, can be activated by dehydrogenation or dehalogenation. These compounds are useful in the formation of positively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.

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Trenton, NJ, United States of America

Charles R Dickson