International Business Machines Corporation

Charles M McKenna

John H Keller

James R Winnard

Wolfgang F Mueller

James A Seirmarco

William W Hicks

John L Forneris

H Keith Willcox

By Margaret Arndt, Administratrix

Herbert L Arndt, Deceased

A plurality of magnetic pole pieces are arranged around the external wall of a high temperature plasma confining structure. The pole pieces are positioned between permanent magnets spaced from one another and the confining structure by distances calculated to produce a minimum field toward the center of the structure with an effective containing field around the periphery of the structure. The magnets and the pole pieces are cooled. An odd number of poles are employed such that the missing pole appears as a virtual pole at the extraction slit used for forming an ion beam for ion implantation. The resulting small package multipole plasma containment functions to provide higher beam current, longer source lifetime, higher voltage stability and reduces maintenance and cleaning operations, with the permanent magnets protected from high temperature and corrosive gases.

Multipole implantation-isotope separation ion beam source

A method and apparatus for modifying a surface, by either plasma etching the surface or plasma depositing a material thereon, by using vacuum ultraviolet radiation to control the modification of the surface.

Photon enhanced reactive ion etching

A method and apparatus for depositing a monocrystalline epitaxial layer of semiconductor material, e.g., silicon containing selected conductivity-determining impurities, on a semiconductor substrate comprising directing a beam of ions of said semiconductor material at the surface of the semiconductor substrate at an energy level below 0.5 Kev., and simultaneously directing a beam of the conductivity-determining impurity ions at at least a portion of the substrate surface whereby a layer of semiconductor material containing said conductivity-determining impurities is formed on said surface, and heating said layer to a temperature of at least 550.degree. C. to render said layer monocrystalline. The beams of semiconductor ions and of conductivity-determining impurity ions are preferably maintained at a high current density of at least 1 ma/cm.sup.2 at the surface of said semiconductor substrate even with a preferable relatively broad beam having diameters of up to 15 cm. Such wide beams are desirably achieved by ion beam apparatus having a high intensity source with a multi-aperture source exit plate.

Formation of epitaxial layers doped with conductivity-determining

Process and apparatus for use in extracting negative ions from a plasma which is particularly useful in reactive ion etching of metals, silicon and oxides and nitrides of silicon in the manufacture of semiconductor devices. A magnetic field is employed in the apparatus and, herein, is created by a novel grid, through which negative ions pass to a surface, such as one to be etched, while free electrons are prevented from passing through the grid and out of the plasma. The novel process utilizes negative ions which have a large fraction in the atomic state.

Negative ion extractor for a plasma etching apparatus

An apparatus for depositing a monocrystalline epitaxial layer of semiconductor material, e.g., silicon containing selected conductivity-determining impurities, on a semiconductor substrate comprising directing a beam of ions of said semiconductor material at the surface of the semiconductor substrate at an energy level below 0.5 Kev., and simultaneously directing a beam of the conductivity-determining impurity ions at at least a portion of the substrate surface whereby a layer of semiconductor material containing said conductivity-determining impurities is formed on said surface, and heating said layer to a temperature of at least 550.degree. C. to render said layer monocrystalline. The beams of semiconductor ions and of conductivity-determining impurity ions are preferably maintained at a high current density of at least 1 ma/cm.sup.2 at the surface of said semiconductor substrate even with a preferable relatively broad beam having diameters of up to 15 cm. Such wide beams are desirably achieved by ion beam apparatus having a high intensity source with a multi-aperture source exit plate.

Apparatus for the formation of epitaxial layers doped with

In an apparatus for bombarding a target with a beam of ions, an expedient is provided for maintaining the beam line and target under vacuum of 2.times.10.sup.-4 Torr. or lower pressures. The apparatus includes a mass separator, e.g., analyzing magnet adapted to provide selected ions which are to be formed into the desired beam with a trajectory along a selected axis: the target is positioned along this selected axis; the apparatus further includes: a housing extending from the mass separator to the target to enclose the axis and target within a chamber, beam defining means within said chamber traversing said axis and impeding the flow of gas through said chamber, said defining means having a beam defining opening therein at said axis to permit the passage of a selected portion of the beam toward the target, and vacuum drawing means connected to said chamber through an opening in said housing crossing said beam defining means whereby said drawing means removes gas from both sides of said beam defining means.

Apparatus for maintaining ion bombardment beam under improved vacuum

In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential.

Ion implantation apparatus for controlling the surface potential of a

In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. The apparatus further includes means for maintaining said shield means at a lower temperature than said target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential. Likewise, this apparatus further includes means for maintaining said shielding means at a temperature lower than said target.

Growing community of inventors

Fishkill, NY, United States of America

Charles M McKenna