Texas Instruments Corporation

Varo, Inc.

Raytheon Company

L-3 Communications Corporation

Raytheon Ti Systems, Inc.

L-3 Communications Coporation

Charles M Hanson

Howard R Beratan

Robert A Owen

Edward G Meissner

Steven N Frank

James F Belcher

William K Walker

Gail D Shelton

Vaughn J Koester

Robert D Fallstrom

Robert J Kyle

James E Robinson

Dana Dudley

Paul O Johnson

Scott Robert Summerfelt

Stephen D Gaalema

Thomas R Schimert

John H Tregilgas

Kirk D Peterson

K R Udayakumar

Mark A Gohlke

Kevin N Sweetser

Virginia N MacDonald

Humphrey Wing-Hong Ha

Kevin Soch

Vicki D Paul

Alex L Kormos

Roger C Knott

Steven E Frank

Lino C Daz

David M Allen

Microbolometer pixel structures including membrane material in a current path between at least two spaced electrodes, the membrane material having multiple openings defined in the current path that are configured such that substantially the entire volume of electrically conductive membrane material in at least a portion of the current path contributes to conduction of current between the electrical contacts.

Pixel structure for microbolometer detector

Read-out cell systems are disclosed for image detectors, including infrared image detectors, that provide improved sensitivity by providing in-cell subtraction through the use of a voltage ramp signal generated using a reference pixel and a feedback amplifier. The ramp voltage is generated using a reference pixel and an amplifier having feedback. The ramp voltage is then provided to a plurality of read-out cells. The ramp voltage can be coupled to an input transistor to provide current subtraction prior to the integration node. The ramp voltage can also be provided to integration capacitors within the read-out cells to provide current subtraction directly to the integration node. Further, a temperature-independent fixed current source can also be utilized to further control current subtraction.

In-cell current subtraction for infrared detectors

Collecting samples to adjust a signal includes providing a shutter in an opened position to allow a detector of an infrared camera to detect infrared radiation and generate a signal corresponding to the infrared radiation. A first touchup iteration is initiated by moving the shutter to a closed position, and samples of a reference frame are collected according to a collection instruction. The shutter is then moved to the opened position. If there is a change in a state of the infrared camera, the collection instruction is adjusted in response to the change. A second touchup iteration is initiated by moving the shutter to the closed position, and samples are collected according to the adjusted collection instruction. A modification of the signal is determined in accordance with at least some of the samples.

Adaptively reducing offset in a thermal imaging camera

Ferroelectric materials useful in monolithic uncooled infrared imaging use Ca and Sn substitutions in PbTiO3 and also have alternatives with dopants such as Dy, Ho, Bi, Ce, and Fe. The ferroelectrics may also be used in non-volatile integrated circuit memories.

Integrated circuit ferroelectric infrared detector and method

An infrared detector ( ) includes a substrate ( ) having thereon an array of detector elements ( ). Each detector element has a membrane ( ), which includes an amorphous silicon layer ( ) in contact with at least two electrodes ( ) that are made of a titanium/aluminum alloy which absorbs infrared radiation. In order to obtain a desired temperature coefficient of resistance (TCR), the amorphous silicon layer may optionally be doped. The effective resistance between the electrodes is set to a desired value by appropriate configuration of the electrodes and the amorphous silicon layer. The membrane includes two outer layers ( ) made of an insulating material. Openings ( ) may optionally be provided through the membrane.

Infrared detector with amorphous silicon detector elements, and a method of making it

Micro-bolometer cell structure

Thermal sensor (36) may include a thermally sensitive element (50), a first thin film electrode (52) and a second thin film electrode (54). The thermally sensitive element (50) may include a plurality of preferentially-ordered crystals. The first thin film electrode (52) may include a plurality of digits (53) in communication with the thermally sensitive element (50). The digits (53) of the first thin film electrode (52) may be in spaced relation with one another. The second thin film electrode (54) may include a plurality of digits (55) in communication with the thermally sensitive element (50) opposite the first thin film electrode (52). The digits (55) of the second thin film electrode (54) may be in spaced relation with one another and in spaced interposed relation with the digits (53) of the first thin film electrode (52).

Thermal detector with inter-digitated thin film electrodes and method

A thermal sensor (36, 84, 114) comprising a thermal assembly (44, 88, 118) and a signal flowpath (46, 90, 120). The thermal assembly (44, 88, 118) may comprise a thermally sensitive element (50) and a pair of electrodes (52, 54). The thermally sensitive element (50) may generate a signal representative of an amount of thermal radiation incident to the thermally sensitive element (50). The electrodes (52, 54) may collect the signal generated by the thermally sensitive element (50). The signal flowpath (46, 90, 120) may transmit the signal collected by the electrodes (52, 54) to the substrate (34, 82, 112). The signal flowpath (46, 90, 120) may comprise a pair of arms (56, 58, 92, 122) each extending from an electrode (52, 54) and be connected to the substrate (34, 82, 112). The arms (56, 58, 92, 122) may support the thermal assembly (44, 88, 118) in spaced relation with the substrate (34, 82, 112). The arms (56, 58, 92, 122) may be formed of a thermally insulating material.

Thermal isolation of monolithic thermal detector

Thermal imaging chopper (22) having a frame (42) with an open window (47) and a covered window (48). The covered window (48) is preferably covered with a material that partially blocks a selected amount of thermal radiation from a scene and randomly scatters the remaining thermal radiation from the scene that is transmitted through the covered window. The open window (47) allows unrestricted transmission of thermal radiation from the scene.

Semi-opaque chopper for thermal imaging system and method

Method of stress-aligning a thermally sensitive element may comprise the step of forming a thin film layer of thermally sensitive material (80). The thin film layer of thermally sensitive material (80) may be crystallized. A stress alignment layer (82) may be formed in communication with the thin film layer of thermally sensitive material (80). The thin film layer of thermally sensitive material (80) may be heated above a transition temperature of the thermally sensitive material. The stress alignment layer (82) may be expanded relative to the thin film layer of thermally sensitive material (80). The thin film layer of thermally sensitive material (80) may be cooled below the transition temperature of the thermally sensitive material. The stress alignment layer (82) may be compressed relative to the thin film layer of thermally sensitive material (80) as the thin film layer of thermally sensitive material (80) cools below the transition temperature to preferentially-order crystals of the thermally sensitive material.

Thermal detector with stress-aligned thermally sensitive element and

Method of preferentially-ordering a thermally sensitive element (50) may comprise the step of forming a first thin film layer of electrically conductive material (75). A thin film layer of thermally sensitive material (80) may be formed on a surface of the first layer of electrically conductive material (75). A second thin film layer of electrically conductive material (85) of lanthanum strontium cobalt oxide (LSCO) may be formed on a surface of the layer of thermally sensitive material (80) opposite the first thin film layer (75). A nucleation layer (87) may be formed in communication with the surface of the layer of thermally sensitive material (80) opposite the first thin film layer (75). The layer of thermally sensitive material (80) may be crystallized beginning at the surface of the thermally sensitive layer (80) in communication with nucleation layer (87). The nucleation layer (87) may be removed.

Method of preferentially-ordering a thermally sensitive element

A chopper is provided of solid state construction. Two layers are provided adjacent one another with the area between the layers defining one or more diffusion zones. One or more voltage potentials may be applied across the second layer to correspond to the diffusion zones. At an initial state the voltage potentials are either zero or some predetermined value which causes the index of refraction of the two layers to be substantially the same. At a second state the voltage potential equals some predetermined value to cause the index of refraction of the second layer to be different from that of the first layer. The difference in index of refraction between the layers creates a diffraction grating in the respective diffusion zone to diffuse that portion of an incident signal passing through the diffusion zone.

Solid state infrared chopper

Thermal sensor (36) mounted to a substrate (34). The thermal sensor may include a first thin film electrode (52), a nucleation element (55), a thermally sensitive element (50) and a second thin film electrode (54). The first thin film electrode (52) may be disposed adjacent to the nucleation element(52). The thermally sensitive element (50) may be in electrical communication with the first thin film electrode (52). The thermally sensitive element (50) may comprise a plurality of preferentially-ordered crystals. The second thin film electrode (54) may be in electrical communication with the thermally sensitive element (50) opposite the nucleation element (55).

Thermal detector with nucleation element and method

A pyroelectric detector system and the pyroelectric detector element therefor having an integrated circuit (1) and a pyroelectric detector element (7) coupled to the integrated circuit and thermally isolated from the integrated circuit. The element includes a lead-containing pyroelectric layer having a pair of opposing surfaces and having a thickness to provide a resonant cavity for radiations in a predetermined frequency range. A bottom electrode (5) opaque to radiations in the predetermined frequency range is secured to one of the pair of opposing surfaces and a top electrode (9, 11) is secured to the other of the pair of opposing surfaces which is semi-transparent to radiations in the predetermined frequency range. The top electrode is taken from the group consisting of platinum and nichrome. The lead-containing pyroelectric layer is preferably lead titanate.

Microbolometer cell structure

An aiming system is provided which includes two sensors. The two sensors sense two respective images of the same object relative to a common reference point. An offset is determined between the respective images of the object. An aiming point is provided on the second image and is spaced from the reference point according to the offset. The aiming point indicates the direction and distance to which the first sensor must be moved to be aligned with the object.

Growing community of inventors

Richardson, TX, United States of America

Charles M Hanson