Texas Instruments Corporation

Charles M Branch

Steven Craig Bartling

Dharin Nayeshbhai Shah

Marc Edward Royer

James Robert Hochschild

Huanzhang Huang

Roland Sperlich

Lieyi Fang

Srinath Hosur

Ashish Khandelwal

Muhammad Yusuf Ali

Kuok Y Ling

Feng Ying

Bharath Siravara

Daramana G Gata

Rajkumar Sankaralingam

Cory Dean Stewart

Pedro R Galabert

Neeraj Mogotra

Samil D Kamath

A circuit includes a receiver that includes an input stage to receive a touch signal from a touch system. A noise reduction circuit that samples the touch signal to detect a noise signal in the touch signal. The noise reduction circuit generates a reduction signal based on the noise signal that is fed back to the input stage of the receiver to mitigate noise interference of the noise signal with respect to the touch signal at the receiver.

Interference reduction circuit for touch system

A serial communication circuit (FIG.) is disclosed. The circuit includes an equalizer circuit () arranged to receive a data signal (CH) and produce an equalized data signal. A log detector circuit () receives the data signal and produces a power signal indicating a power level of the data signal. A decision circuit () receives the power signal and produces a select signal. A first selection circuit () receives a plurality of first correction signals and applies one of the first correction signals to the equalizer circuit in response to the select signal.

Closed-loop high-speed channel equalizer adaptation

An inverter type level shifter includes a first power supply voltage and a first ground voltage. A first inverter operates on the first power supply voltage and the first ground voltage to generate a first inverter output. The first inverter includes a first PMOS transistor having a drain coupled to a source of a blocking PMOS transistor and a first NMOS transistor having a drain coupled to a source of a blocking NMOS transistor. The level shifter further includes a second power supply voltage and a second ground voltage, and a second inverter coupled to the first inverter output and operates on the second power supply voltage and the second ground voltage. The blocking PMOS provides the required blocking on the event of the voltage spike in the second power supply voltage w.r.t the first power supply voltage and the blocking NMOS transistor provides the required blocking on the event of the voltage spike in the second ground voltage with respect to the first ground voltage.

ESD robust level shifter

A digital storage element comprises a master transparent latch that receives functional data signals from data input ports and scan data signals from a scan input port. The data input ports are coupled to a two-input, one-output multiplexer adapted to receive the functional data signals and to selectively output one of the functional data signals. The digital storage element also comprises a slave transparent latch coupled to the master transparent latch, the slave transparent latch comprising dedicated functional data and scan data output ports. While operating in a scan mode, a first clock signal is used by the slave transparent latch and a second clock signal is used by the master transparent latch, wherein the first and second clock signals are non-overlapping.

Digital storage element architecture comprising integrated 2-to-1 multiplexer functionality

Memory compiler engineers often focus on the efficient implementation of the largest possible memory configurations for each memory type. The overhead of test and control circuitry within memory implementations is usually amortized across a large number of storage bits. Unfortunately, test structures generally do not scale down with decreasing memory sizes, creating a large area penalty for a design with numerous small memories. One solution is a scannable register file (SRF) architecture using scannable latch bit-cells laid out using a standard cell layout/power template. All sub-cells can be placed in standard cell rows and utilize standard cell power straps. Non-SRF standard cells can be abutted on all sides, placement keep-out regions are not needed. Metal utilization is usually limited to first three metallization layers. The bit-cell is much larger than standard compiled memory bit cells, but has no overhead beyond address decode, word-line drivers, and read-write data latches.

Scan testable register file

A master and a slave stage of a flip-flop are each separately clocked with non-overlapping clock signals during scan mode to eliminate a data input scan mode multiplexer. Separate, non-overlapping clocking permits the elimination of hold violations in scan mode for scan mode flip flop chains, permitting the elimination of delay buffers in the scan mode data paths. Resulting application circuits have reduced circuit area, power consumption and noise generation. A clock generator for scan mode clocking is provided to obtain the separate, non-overlapping scan mode clocks. Scan mode clocks may be generated with a toggle flip flop, a pulse generator or a clock gating circuit.

Digital design component with scan clock generation

A system and method for repairing crosstalk delays are disclosed herein. By modeling the change in effective capacitance, one may determine the delay attributable to crosstalk, and upsize cells in the failing net according to a mathematical formula in order to counter the delay.

Method and system for correcting signal integrity crosstalk violations

Various systems and methods for implementing memory devices are disclosed. For example, some embodiments of the present invention provide sub-threshold memory devices that include a differential bit cell. Such a differential bit cell includes two PMOS transistors, two NMOS transistors, and two inverters. The source of the first PMOS transistor and the source of the second PMOS transistor are electrically coupled to a bit line input, and the source of the first NMOS transistor and the source of the second NMOS transistor are electrically coupled to the bit line input. The gate of the first NMOS transistor and the gate of the second NMOS transistor are electrically coupled to a word line input. The gate of the first PMOS transistor and the gate of the second PMOS transistor are electrically coupled to an inverted version of the word line input. The drain of the first PMOS transistor is electrically coupled to the drain of the first NMOS transistor, and the drain of the second PMOS transistor is electrically coupled to the drain of the second NMOS transistor. In addition, the drain of the first PMOS transistor is electrically coupled to the drain of the second PMOS transistor by the first inverter, and the drain of the second PMOS transistor is electrically coupled to the drain of the first PMOS transistor by the second inverter.

Systems and devices for implementing sub-threshold memory devices

A digital storage element (e.g., a flip-flop or a latch) includes a master transparent latch that receives functional data from a data input port and scan data from a scan input port and a slave transparent latch coupled to the master transparent latch. The slave transparent latch includes dedicated functional data and scan data output ports. The digital storage element operates in a functional mode and in a scan mode. While in the scan mode, a first clock signal is used by the slave transparent latch and a second clock signal is used by the master transparent latch. The first and second clock signals are non-overlapping and, as such, avoid the digital storage element from creating hold violations.

Digital storage element architecture comprising dual scan clocks and gated scan output

A system architecture including a co-processor and a memory switch resource is disclosed. The memory switch includes multiple memory blocks and switch circuitry for selectably coupling processing units of the co-processor, and also a bus slave circuit coupled to a system bus of the system, to selected ones of the memory blocks. The memory switch may be constructed as an array of multiplexers, controlled by control logic of the memory switch in response to the contents of a control register. The various processing units of the co-processor are each able to directly access one of the memory blocks, as controlled by the switch circuitry. Following processing of a block of data by one of the processing units, the memory switch associates the memory blocks with other functional units, thus moving data from one functional unit to another without requiring reading and rewriting of the data.

Pipelined access by FFT and filter units in co-processor and system bus slave to memory blocks via switch coupling based on control register content

A digital storage element (e.g., a flip-flop or a latch) comprise a master transparent latch that receives functional data from a data input port and scan data from a scan input port and a slave transparent latch coupled to the master transparent latch. The slave transparent latch comprises dedicated functional data and scan data output ports. A clock gating element is also included that gates off a clock to the slave latch, and not the master transparent latch, based on an enable signal that is asserted to disable use of the digital storage element.

Digital storage element with enable signal gating

An apparatus for generating pulses includes: (a) A delay unit having an input delay locus for receiving a delay unit input signal and an output delay locus for presenting an output delay signal. The delay unit output signal is delayed by a delay interval with respect to the input delay signal. (B) A latch coupled with the delay unit to selectively keep the delay unit input signal at at least one predetermined signal level.

Apparatus and method for generating pulses

A digital storage element comprising a master transparent latch that receives functional data from a data input port and scan data from a scan input port and comprises a master feedback loop with a first transistor coupled to the master feedback loop. The first transistor also is coupled to electrical ground. The digital storage element also comprises a slave transparent latch coupled to the master transparent latch, the slave transparent latch comprising dedicated functional data and scan data output ports, a slave feedback loop and a second transistor coupled to the slave feedback loop. The second transistor is coupled to electrical ground. When a clock signal is in a first state, the first single transistor is activated to preset the digital storage element. When the clock signal is in a second state, the second single transistor is activated to preset the digital storage element.

Digital storage element architecture comprising dual scan clocks and preset functionality

A digital storage element comprises a master transparent latch that receives functional data from a data input port and scan data from a scan input port and a slave transparent latch coupled to the master transparent latch. The slave transparent latch comprises dedicated functional data and scan data output ports. The master and slave transparent latches have opposite transparent polarities when in a functional mode and have the same polarities (e.g., positive level sense) when in a scan mode. The transparent polarity of a transparent latch defines the state of a clock to that latch for which the transparent latch is transparent.

Growing community of inventors

Dallas, TX, United States of America

Charles M Branch