Novellus Systems Incorporated

Charles Lorenzo Merrill

Gishun Hsu

Scott Stoddard

Steven T Mayer

Jonathan David Reid

Bryan L Buckalew

David W Porter

Shantinath Ghongadi

Haiying Fu

Matthew S Thorum

Frederick Dean Wilmot

Kousik Ganesan

Jeffrey Alan Hawkins

Mark J Willey

Tighe A Spurlin

Robert Marshall Stowell

Lee J Brogan

James E Duncan

Ludan Huang

Jason Daniel Marchetti

Hyosang S Lee

Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.

Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte

An apparatus for conditioning deionized water and delivering it to a semiconductor wafer in a post electrofill module includes a degassing station configured to remove dissolved gas from the deionized water flow, a heating station configured to heat the deionized water flow, and a nozzle configured to deliver the deionized water flow to the wafer. The heating and degassing are performed before the delivery of the deionized water flow to the wafer. In some implementations the degassing station includes a contact degasser or an inert gas bubbler, and the heating station is configured to heating the deionized water flow to a temperature of between about 35-40&#xb0; C. In some embodiments the deionized water flow is passed through the degassing station before being passed through the heating station.

Deionized water conditioning system and methods

Acetylene is treated to remove some residual storage solvent that may be present with the acetylene in a source of acetylene such as a container. Such treatment may be performed prior to supplying the acetylene to a deposition chamber or other reactor where acetylene is a reactant. After treatment, the acetylene gas stream has a relatively constant concentration of storage solvent, regardless of how much acetylene has been released from the acetylene source. The treatment may involve condensing the storage solvent from the gas stream at a certain temperature and separating the storage solvent from the gas stream.

Method for purifying acetylene gas for use in semiconductor processes

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Portland, OR, United States of America

Charles Lorenzo Merrill