Beaver Creek Concepts Inc

Other

E.i. Dupont De Nemours and Company

Semcon Tech, LLC

Ticona Gmbh

Charles J Molnar

Judith R Molnar

Paul R Resnick

Hyunkook Shin

Richard T Chou

Hyun Sung Lim

William H Mitchell

Patrick Stephen Ireland

Walther G Grot

David M Dean

Edward H Price

Joel David Citron

Marion G Waggoner

Michael Robert Samuels

Roger Moons

Versatile methods of refining a first and a second layer of a workpiece are discussed. New refining methods and refining apparatus are disclosed. The new refining methods can help improve yield and appreciably change the cost of manufacture for refining of workpieces. The methods can be applied to workpieces having extremely close tolerances such as semiconductor wafers. New methods of control are also discussed. Methods use controllers, processors, computers, and processor readable memory devices are discussed. Use of stored information is to make changes in process control are discussed. Use of process models are discussed for refining. Determining a changed process control with stored information from first and second layers of a workpiece is disclosed. A changed process control can make an appreciable changes to the cost of manufacture of a workpiece.

Versatile workpiece refining

Methods of using in situ finishing information for finishing workpieces and semiconductor wafers are described. Methods of using yield information at least in part related to cost of manufacture for finishing workpieces and semiconductor wafers are described. Changes or improvements to cost of manufacture of a workpiece using current in-process cost of manufacture information, tracked current in-process cost of manufacture information, or current cost of manufacture parameters are discussed. Appreciable changes to quality or cost of manufacture of a workpiece using tracking, using in-process tracked information, networks including a multiplicity of apparatus, and using in situ finishing information are discussed. A factory, apparatus, and methods to change or improve process control are discussed. A factory, apparatus, and methods to change or improve real-time process control are discussed. A factory, apparatus, and methods to change or improve feedforward and feedback control are discussed. The workpieces can be tracked individually or by process group such as a process batch.

Advanced finishing control

Ovenware for microwave ovens which contain a composition comprising a susceptor and a thermoplastic or thermoset polymer are improved when the composition also has a thermal conductivity of about 0.7 W/m&#xb0; K. or more. Heat generated by absorption of microwave radiation by the susceptor is more readily conducted to the food being cooked when the thermal conductivity of the composition is high, particularly when the part containing the susceptor is relatively thick. Also described are designs for various pieces of ovenware containing this composition.

Ovenware for microwave oven

A factory, an apparatus, and methods of using an in situ finishing information for finishing workpieces and semiconductor wafers are described. Changes or improvements to cost of manufacture of a workpiece using current in-process cost of manufacture information, tracked current in-process cost of manufacture information, or current cost of manufacture parameters are discussed. Appreciable changes to quality or cost of manufacture of a workpiece using tracking, using in-process tracked information, networks including a multiplicity of apparatus, and using in situ finishing information are discussed. A factory, apparatus, and methods to change or improve process control are discussed. A factory, apparatus, and methods to change or improve real-time process control are discussed. A factory, apparatus, and methods to change or improve feedforward and feedback control are discussed. The workpieces can be tracked individually or by process group such as a process batch.

An apparatus for planarizing is disclosed. A methods of planarizing are disclosed. The methods and apparatus, can help improve yield and lower the cost of manufacture for planarizing of workpieces having extremely close tolerances such as semiconductor wafers. Cost of manufacture information are used for control. Methods to determine preferred changes to process control parameters are disclosed. Cost of manufacture models can be used and are disclosed. Process models can be used and are disclosed. A method to use business calculations combined with physical measurements to improve control is discussed. Use of business calculations to change the cost of planarizing and finishing semiconductor wafers is discussed. Activity based accounting can be used for some applications. Electro-planarizing and electro-processing for adding and removing material is disclosed. Use of current cost of manufacture information including activity based accounting information for improving manufacture, cost of manufacture, and profitability is discussed.

Advanced workpiece finishing

An apparatus for processing, finishing, and planarizing is disclosed. A methods of processing are disclosed. New methods of control for processing are disclosed. The methods and apparatus, can help improve yield and lower the cost of manufacture for planarizing of workpieces having extremely close tolerances such as semiconductor wafers. Cost of manufacture parameters are used for control. Methods to determine preferred changes to process control parameters are disclosed. Use of a model for improving manufacture, cost of manufacture, and profitability is discussed.

A factory, an apparatus, and methods of using an in situ finishing information for finishing workpieces and semiconductor wafers are described. Changes or improvements to cost of manufacture of a workpiece using in-process cost of manufacture information, tracked in-process cost of manufacture information, or cost of manufacture parameters are discussed. Appreciable changes to quality or cost of manufacture of a workpiece using tracking, using in-process tracked information, networks including a multiplicity of apparatus, and using in situ finishing information are discussed. A factory, apparatus, and methods to change or improve process control are discussed. A factory, apparatus, and methods to change or improve real-time process control are discussed. A factory, apparatus, and methods to change or improve predictive control are discussed. The workpieces can be tracked individually or by process group such as a process batch.

Methods of refining using a plurality of refining elements are discussed. A refining apparatus having refining elements that can be smaller than the workpiece being refined are disclosed. New refining methods, refining apparatus, and refining elements disclosed. Methods of refining using frictional refining, chemical refining, tribochemical refining, and electrochemical refining and combinations thereof are disclosed. A refining apparatus having magnetically responsive refining elements that can be smaller than the workpiece being refined are disclosed. The refining apparatus can supply a parallel refining motion to the refining element(s) for example through magnetic coupling forces. The refining apparatus can supply multiple different parallel refining motions to multiple different refining elements for example solely through magnetic coupling forces to improve refining quality and versatility. A refining chamber can be used. New methods of control are refining disclosed. The new refining methods, including magnetic refining methods, apparatus, and refining elements, including magnetically responsive refining elements, can help improve yield and lower the cost of manufacture for refining of workpieces having extremely close tolerances such as semiconductor wafers. New methods of control are also discussed. Methods and apparatus which use processor readable memory devices are discussed. Refining fluids are preferred. Reactive refining aids are preferred. Electro-refining for adding and removing material is disclosed. New methods and new apparatus for non-steady state refining control are disclosed.

Versatile wafer refining

An apparatus and method of using an in situ finishing information for finishing workpieces and semiconductor wafers are described. The method uses operative sensors such as friction sensors for detecting and improving control during finishing. The method can aid control of finishing while using in situ finishing information and cost of manufacture information. The method can aid control of finishing while using organic lubricants, lubricating films, and lubricating boundary layers in the operative finishing interface. The method can generally aid control of differential finishing such as when using differential lubricating films such as lubricating boundary layers. Control can generally aid improvement of differential finishing of workpieces such as semiconductor wafers. Planarization and localized finishing can be used with in situ finishing information such as differential lubricating boundary layer(s) for finishing. Defects can generally be reduced using in situ finishing information such as friction information and/or cost information. In situ improvements to cost of manufacture of a workpiece such as a semiconductor wafer using tracking and using in-process cost of manufacture information and/or cost of manufacture parameters are discussed. In situ improvements to cost of manufacture of a workpiece such as a semiconductor wafer using tracking and using in-process tracked information and/or cost of manufacture parameters are discussed. Methods and apparatus to change and/or improve in situ process control are discussed. Methods and apparatus to change and/or improve real-time process control are discussed. The semiconductor wafers can be tracked individually or by process group such as a process batch. Abrasive finishing surfaces can be used. Tribochemical finishing can generally be improved.

A method of using finishing aids for advanced finishing control is described. A finishing surface is used generally to induce frictional wear. The finishing aids with preferred in situ control can improve control of the coefficient of friction, the tangential force of friction, a finishing rate, a regional finishing rate(s), a differential finishing rate, and help reduce unwanted defects. A finishing aid can reduce friction. A lubricant is an illustrative finishing aid. The method uses finishing control subsystem having a multiplicity of operative process sensors along with tracked information to improve in situ control of finishing. Differential finishing rate methods are described to differentially finish semiconductor wafers. Differential lubricating film methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer methods of finishing with improved real time control.

situ finishing aid control

An apparatus and method of using a in situ finishing information for finishing semiconductor wafers is described. The method uses operative sensors such as friction sensors for detecting and improving control during finishing. The method can aid control of finishing while using in situ finishing information and cost of manufacture information. The method can aid control of finishing while using organic lubricants, lubricating films, and lubricating boundary layers in the operative finishing interface. The method can generally aid control of differential finishing such as when using differential lubricating films such as lubricating boundary layers. Control can generally aid improvement of differential finishing of semiconductor wafers. Planarization and localized finishing can used with in situ finishing information such as differential lubricating boundary layer for finishing. Defects can generally be reduced using the in situ friction finishing information method. Real time improvements to cost of manufacture semiconductor wafer manufacture can be made by tracking and using current in process cost of manufacture information and cost of manufacture parameters. The semiconductor wafers can be tracked individually or by process group such as a process batch. Abrasive finishing surfaces can be used. Tribochemical finishing can generally be improved.

In situ finishing control

An apparatus for planarizing is disclosed. A method of planarizing is disclosed. Methods of planarizing using frictional planarizing, chemical planarizing, tribochemical planarizing, CVD planarizing, and electrochemical planarizing and combinations thereof are disclosed. A planarizing chamber can be used. New methods of control are planarizing disclosed. The new planarizing methods and apparatus, can help improve yield and lower the cost of manufacture for planarizing of workpieces having extremely close tolerances such as semiconductor wafers. Cost of manufacture parameters are used for control. Methods to determine preferred changes to process control parameters are disclosed. Cost of manufacture models can be used and are disclosed. Process models can be used and are disclosed. A method to use business calculations combined with physical measurements to improve control is discussed. Use of business calculations to change the cost of finishing semiconductor wafers is discussed. The method can help cost of manufacture forecasting for pre-ramp-up, ramp-up, and commercial manufacture. Activity based accounting can be preferred for some applications. Planarizing fluids are preferred. Reactive planarizing aids are preferred. Electro-planarizing for adding and removing material is disclosed. New methods and new apparatus for non-steady state planarizing control are disclosed.

Advanced wafer planarizing

A refining apparatus having magnetically responsive refining elements that can be smaller than the workpiece being refined are disclosed. The refining apparatus can supply a parallel refining motion to the refining element(s) through magnetic coupling forces. The refining apparatus can supply multiple different parallel refining motions to multiple different refining elements solely through magnetic coupling forces to improve refining quality and versatility. New refining methods, refining apparatus, and refining elements disclosed. Methods of refining using frictional refining, chemical refining, tribochemical refining, and electrochemical refining and combinations thereof are disclosed. A refining chamber can be used. New methods of control are refining disclosed. The new magnetic refining methods, apparatus, and magnetically responsive refining elements can help improve yield and lower the cost of manufacture for refining of workpieces having extremely close tolerances such as semiconductors wafers. Refining fluids are preferred. Reactive refining aids are preferred. Electro-refining for adding and removing material is disclosed. A method to use business calculations combined with physical measurements to improve control is discussed. Use of business calculations to change the cost of finishing semiconductor wafers is discussed. The method can help cost of manufacture forecasting for pre-ramp-up, ramp-up, and commercial manufacture. Actively based accounting can be preferred for some applications. New methods and new apparatus for non-steady state refining control are disclosed.

Advanced wafer refining

A method of in situ control for finishing semiconductor wafers to improve cost of ownership is discussed. A method to use business calculations combined with physical measurements to improve control is discussed. The use of lubricating layer control in the operative finishing interface is discussed. Use of business calculations to change the cost of finishing semiconductor wafers is discussed. The method aids control of differential lubricating films and improved differential finishing of semiconductor wafers. The method aids cost of manufacture forecasting. The method can help manage and/or reduce cost of manufacture for pre-ramp-up, ramp-up, and commercial manufacture of the workpieces. The method can aid cost of manufacture forecasting for pre-ramp-up, ramp-up, and commercial manufacture of the workpieces. The method can aid process control for pre-ramp-up, ramp-up, and commercial manufacture of workpieces. Activity based accounting can be preferred for some applications. Planarization and localized finishing can be improved using differential lubricating films for finishing. New methods and new apparatus for finishing control are disclosed.

Wafer refining

A method of using a finishing element and using organic lubricating films for finishing semiconductor wafers is described. The lubricants in the finishing element can be transferred to operative finishing interface and can form a self-assembling lubricating film. The organic lubricating film thickness can be controlled to improve finishing and reduce unwanted surface defects. Differential organic lubricating film methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer and organic lubricating film methods of finishing.

Growing community of inventors

Wilmington, DE, United States of America

Charles J Molnar