Commissariat a L'energie Atomique Et Aux Energies Alternatives

Charles Huguet

Jean-Paul Garandet

Denis Camel

Béatrice Drevet

Nicolas Eustathopoulos

Rayisa Voytovych

Johann Testard

Virginie Brize

Severine Bailly

Séverine Bailly

A substrate characterised in that it is at least partially surface-coated with a coating containing at least one so-called 'barrier' layer having silica and one or more material(s) X selected from among SiC, Si, SiN, in which layer the amount of X varies between 25-wt. % and 50.-wt. % in relation to the total weight of the barrier layer, the barrier layer being formed by grains of one or more materials X covered at least partially in a silica shell, and the barrier layer being in direct contact with the substrate.

Substrate with low-permeability coating for the solidification of silicon

A substrate, in particular intended for contact with liquid silicon, wherein it is at least partially surface-coated with a multilayer coating formed by: at least one layer, known as the adhesion layer, contiguous with the substrate, having an open porosity of at least 30%, and formed of a material comprising silica and silicon nitride, said material having a silica content of between 10 wt.-% and 55 wt.-% in relation to the total weight thereof; and a layer different from the adhesion layer, known as the release layer, located on the surface of the adhesion layer and formed of a material including silica and silicon nitride, said material having a silica content of between 2 wt.-% and 10 wt.-% in relation to the total weight thereof.

Substrate for solidifying a silicon ingot

The present invention concerns a crucible for solidifying a silicon ingot from molten silicon, characterized in that it is coated at least partially on the inner surface thereof with an outer layer provided in the form of a stack of laminations, each lamination having a thickness varying from 5 to 150 &#x3bc;m, and being formed from a material obtained by thermal decomposition of polysilazane(s) and/or polysiloxane(s) and wherein inorganic particles are embedded having a size varying from 50 &#x3bc;m to 200 &#x3bc;m. The present invention further concerns a method for preparing such crucibles.

Crucible for solidifying a silicon ingot

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Paris, France

Charles Huguet