Motorola Corporation

Freescale Semiconductor,inc.

Charles E Weitzel

Mohit Bhatnagar

Karen Elizabeth Moore

Kenneth L Davis

Christine Thero

Olin L Hartin

Ellen Y Lan

Bruce McRae Green

Neal J Mellen

Hsin-Hua P Li

Syd R Wilson

Sung P Pack

Lawrence Scott Klingbeil

Thomas Allen Wetteroth

Edward L Fisk

Matthias Passlack

Mariam G Sadaka

Vijay K Nair

Paige M Holm

Carl Lynn Shurboff

Ernest Schirmann

Colby Greg Rampley

Julio C Costa

Monte Gene Miller

Marino J Martinez

Lalgudi M Sundaram

Marcus R Ray

Nada El-Zein

Randy D Redd

David J Halchin

Steven C Lazar, Jr

Karl J Johnson

Philip Li

Michael Zunino

Paul A Fisher

Douglas G Scheitlin

In one embodiment, a semiconductor device () includes a buffer layer () formed over a substrate (). An AlGaAs layer () is formed over the buffer layer () and has a first doped region () formed therein. An InGaAs channel layer () is formed over the AlGaAs layer (). An AlGaAs layer () is formed over the InGaAs channel layer (), and the AlGaAs layer () has a second doped region formed therein. A GaAs layer () having a first recess is formed over the AlGaAs layer (). A control electrode () is formed over the AlGaAs layer (). A doped GaAs layer () is formed over the undoped GaAs layer () and on opposite sides of the control electrode () and provides first and second current electrodes. When used to amplify a digital modulation signal, the semiconductor device () maintains linear operation over a wide temperature range.

pHEMT with barrier optimized for low temperature operation

A semiconductor structure includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, a third semiconductor layer over the second semiconductor layer, and a fourth semiconductor layer over the third semiconductor layer. A first conductive portion is coupled to the first semiconductor layer, and a second conductive portion is formed over the first semiconductor layer.

Recessed semiconductor device

In one embodiment of the invention, a semiconductor component includes a semiconductor substrate (), a first dielectric layer () above the semiconductor substrate, a first ohmic contact region () and a second ohmic contact region () above the semiconductor substrate, a gate electrode () above the semiconductor substrate and between the first ohmic contact region and the second ohmic contact region, a field plate () above the first dielectric layer and between the gate electrode and the second ohmic contact region, a second dielectric layer () above the field plate, the first dielectric layer, the first ohmic contact region, and the second ohmic contact region, and a third dielectric layer () between the gate electrode and the field plate and not located above the gate electrode or the field plate.

Method of manufacturing a semiconductor component that includes self-aligning a gate electrode to a field plate

A method for fabricating an RF enhancement mode FET () having improved gate properties is provided. The method comprises the steps of providing () a substrate () having a stack of semiconductor layers () formed thereon, the stack including a cap layer () and a central layer () defining a device channel, forming () a photoresist pattern () over the cap layer, thereby defining a masked region and an unmasked region, and, in any order, (a) creating () an implant region () in the unmasked region, and (b) removing () the cap layer from the unmasked region. By forming the implant region and cap region with no overlap, a device with low current leakage may be achieved.

Advanced RF enhancement-mode FETs with improved gate properties

A microwave field effect transistor () has a high conductivity gate () overlying a double heterojunction structure () that has an undoped channel layer (). The heterojunction structure overlies a substrate (). A recess layer that is a not intentionally doped (NID) layer () overlies the heterojunction structure and is formed with a predetermined thickness that minimizes impact ionization effects at an interface of a drain contact of source/drain ohmic contacts () and permits significantly higher voltage operation than previous step gate transistors. Another recess layer () is used to define a gate dimension. A Schottky gate opening () is formed within a step gate opening () to create a step gate structure. A channel layer () material of InGaAs is used to provide a region of electron confinement with improved transport characteristics that result in higher frequency of operation, higher power density and improved power-added efficiency.

Method for forming a microwave field effect transistor with high operating voltage

An integrated smart power circuit including a power semiconductor device fabricated on a conducting substrate with a source positioned adjacent the upper surface of the substrate, a control terminal between the upper and lower surfaces, and a drain positioned adjacent the lower surface of the substrate. A high resistance layer is formed on a portion of the upper surface of the substrate, either directly overlying or adjacent to the power device, and doped semiconductor material is positioned on the high resistance layer. Control circuitry is formed in the doped semiconductor material. The high resistance layer can be conveniently formed by growing a layer of AlAs and growing doped layers on the AlAs. The AlAs can be easily oxidized thereafter.

3-D smart power IC

A silicon carbide transistor (,) is formed from a silicon carbide film (,) that is formed on a silicon carbide substrate bulk (,). A conductor pattern layer (,) is formed on the silicon carbide film (,) and the silicon carbide film (,) removed from the silicon carbide substrate bulk (,) and attached to a substrate (,) of a dissimilar semiconductor material.

Silicon carbide transistor and method therefor

A lateral gate, vertical drift region transistor including a drain positioned on one surface of a substrate and a doped structure having a buried region therein positioned on the other surface of the substrate. The buried region defining a drift region in the doped structure extending vertically from the substrate and further defining a doped region in communication with the drift region and adjacent the surface of the doped structure. A source positioned on the doped structure in communication with the doped region and an implant region positioned in the doped region adjacent the surface and in communication with the source and buried region. An insulating layer positioned on the doped structure with a metal gate positioned on the insulating layer so as to define an inversion region in the implant region extending laterally adjacent the control terminal and communicating with the drift region and the source.

Lateral gate, vertical drift region transistor

A method of performing electron beam lithography on high resistivity substrates including forming semiconductor material on a high resistivity substrate and etching the semiconductor material to form mesas with electrically interconnecting bridges between the mesas. Semiconductor devices are formed in the mesas employing electron beam lithography and charges generated by the electron beam lithography are dispersed along the interconnecting bridges thereby preventing charge accumulation on the mesas. The bridges are removed by etching or sawing during die separation.

Method of electron beam lithography on very high resistivity substrates

A high breakdown voltage HFET includes a reduced surface field (RESURF) layer of p-type conductivity GaN positioned on a substrate with a channel layer of n-type conductivity GaN positioned thereon. A barrier layer of n-type conductivity Al.sub.x Ga.sub.1-x N is positioned on the channel layer to form a lateral channel adjacent to and parallel with the interface. A gate electrode is positioned on the barrier layer overlying the lateral channel and a drain electrode is positioned on the channel layer in contact with the lateral channel and spaced to one side of the gate electrode a distance which determines the breakdown voltage. A source electrode is positioned on the channel layer to the opposite side of the gate electrode, in contact with the lateral channel and also in contact with the RESURF layer.

High breakdown voltage resurf HFET

A silicon carbide MESFET (10) is formed to have a source (21) and a drain (22) that are self-aligned to a gate (16) of the MESFET (10). The gate (16) is formed to have a T-shaped structure with a gate-to-source spacer (18) and gate-to-drain spacer (19) along each side of a base of the gate (16). The gate (16) is used as a mask for implanting dopants to form the source (21) and drain (22). A laser annealing is performed after the implantation to activate the dopants. Because the laser annealing is a low temperature operation, the gate (16) is not detrimentally affected during the annealing.

Silicon carbide transistor and method

A method of fabricating an integrated VFET and Schottky diode including forming a source region on the upper surface of a substrate so as to define a channel. First and second spaced apart gates are formed on opposing sides of the source region so as to abut the channel, thereby forming a channel structure. Schottky metal is positioned on the upper surface of the substrate proximate the channel structure to define a Schottky diode region and form a Schottky diode. A source contact is formed in communication with the source region and the Schottky metal, and a drain contact is formed on the lower surface of the substrate.

Method of fabricating vertical FET with Schottky diode

A method of fabricating a semiconductor device on thinned wide bandgap material including providing a support having a planar surface and a semiconductor substrate. Implanting a layer of ions in the substrate to create a layer of microbubbles defining a thin film having a planar surface and a remaining mass separated by the layer of implanted ions. Intimately contacting the planar surface of the thin film to the planar surface of the support and heating the support and substrate to separate the remaining mass from the thin film. A semiconductor device is formed on the thin film, and the support is thinned.

Method of fabricating a semiconductor device with a thinned substrate

AN IGBT including a collector positioned on one surface of a substrate and a doped structure having a buried region therein positioned on the other surface of the substrate. The buried region defining a drift region in the doped structure extending vertically from the substrate and further defining a doped region in communication with the drift region and adjacent the surface of the doped structure. An emitter positioned on the doped structure in communication with the doped region. An insulating layer positioned on the doped structure with a metal gate positioned on the insulating layer so as to define a conduction channel extending laterally adjacent the control terminal and communicating with the drift region and the emitter. The substrate and buried region are the same conductivity and opposite the doped region to form a bipolar transistor therebetween.

Growing community of inventors

Mesa, AZ, United States of America

Charles E Weitzel