University of California

Vu1 Corporation

Lawrence Semiconductor Research Laboratory, Inc.

Other

Lawrence Livermore National Security, LLC

Arizona Board of Regents, a Body Corporate

Charles E Hunt

Jeffrey J Peterson

Richard N Herring

Regan Andrew Zane

Richard Charles Westhoff

Bernard K Vancil

McDonald Robinson

Li Ling

Tomas Hasilik

Viktor Jelinek

Thomas Skupien

Richard Gale Sellers

Adam M Conway

Mihail Bora

Qinghui Shao

Erik Lars Swanberg, Jr

David Lawrence Hall

Ziv Atzmon

Andrei G Chakhovskoi

Philip Datte

Bernard K Vanch

Clement Antoine Trosseille

Bearnard K Vancil

Peter J Bjeletich

Devices, systems and methods for solid-state X-ray detection with high temporal resolution are described. An example method includes receiving an X-ray pulse in a semiconductor chip resulting in an electron cloud being formed in the semiconductor chip, applying a first set of voltages across a first plurality of drift cathode strips on a first side of the semiconductor chip and a second plurality of drift cathode strips on a second side of the semiconductor chip, applying a second set of voltages to across the first and the second plurality of drift cathode strips to form an electric field having a linear profile to cause the electron cloud to drift along the middle of the semiconductor chip, and activating a counter cathode on the second side and one or more readout anodes on the first side to collect the electron cloud after spreading in the middle section of the semiconductor chip.

High temporal resolution solid-state X-ray detection system

Electron sources for a cathodoluminescent lighting system are disclosed. An electron source is a broad-beam reflecting-type electron gun having a cathode for emitting electrons and a reflector and/or secondary emitter electrode and no grids. An alternative electron gun has a cathode having a heater welded to a disk, the disk having an emissive surface on a side facing a dome-shaped defocusing grid and an anode. A lighting system incorporating the electron sources has an envelope with a transparent face, an anode with a phosphor layer to emit light through the face and a conductor layer. The system also has a power supply for providing from five to thirty thousand volts of power to the light emitting device to draw electrons from cathode to anode and excite a cathodoluminescent phosphor, and the electrons transiting from cathode to anode are essentially unfocused. A power-factor-corrected embodiment is also disclosed.

System and apparatus for cathodoluminescent lighting

A device for lighting a room is described. The device has an envelope with a transparent face, the face having an interior surface coated with a cathodoluminescent screen and a thin, reflective, conductive, anode layer. There is a broad-beam electron gun mounted directly to feedthroughs in a base of the envelope with a heated, button-on-hairpin, cathode for emitting electrons in a broad beam towards the anode, and a power supply mounted on the feedthroughs at the base of the envelope that drives the cathode to a multi-kilovolt negative voltage. A two-prong snubber serves as an anode contact to permit the power supply to drive the anode to a voltage near ground. A method of manufacture of the anode uses a single step deposition and lacquering process followed by a metallization using a conical-spiral tungsten filament coated with aluminum by a thermal spray coating process.

System and manufacturing a cathodoluminescent lighting device

A cathodoluminescent lighting system has a light emitting device having an envelope with a transparent face, a cathode for emitting electrons, an anode with a phosphor layer and a conductor layer. The phosphor layer emits light through the transparent face of the envelope. The system also has a power supply for providing at least five thousand volts of power to the light emitting device, and the electrons transiting from cathode to anode are essentially unfocused. Additional embodiments responsive to triac-type dimmers with intensity and color-changes in response to dimmer control. A power-factor-corrected embodiment is also disclosed.

A light emitting device has a cathode-ray tube and power supply. The cathode-ray tube in an embodiment is optimized for emitting a broad electron beam, in one variation a dome-shaped diffusing grid is used to spread the beam. In another embodiment, the device has a base adapted for attachment to a standard lighting fixture.

Cathodoluminescent phosphor lamp having extraction and diffusing grids and base for attachment to standard lighting fixtures

A cathodolumineseent lighting system has a light emitting device having an envelope with a transparent face, a cathode for emitting electrons, an anode with a phosphor layer and a conductor layer. The phosphor layer emits light through the transparent face of the envelope. The system also has a power supply for providing at least five thousand volts of power to the light emitting device, and the electrons transiting from cathode to anode are essentially unfocused. Additional embodiments responsive to triac-type dimmers with intensity and color-changes in response to dimmer control. A power-factor-corrected embodiment is also disclosed.

One embodiment of the present invention provides a system for co-fabricating strained and relaxed crystalline, poly-crystalline, and amorphous structures in an integrated circuit device using common fabrication steps. The system operates by first receiving a substrate. The system then fabricates multiple layers on this substrate. A layer within these multiple layers includes both strained structures and relaxed structures. These strained structures and relaxed structures are fabricated simultaneously using common fabrication steps.

Method for co-fabricating strained and relaxed crystalline and poly-crystalline structures

One embodiment of the present invention provides a system that determines the composition of a layer within an integrated device. The system operates by first receiving the integrated device. Next, the system measures properties of the layer using electromagnetic radiation. The properties of the layer measured are used to determine an index of refraction for the layer. The system then solves for the composition of the layer using the index of refraction.

Method and apparatus for determining layer thickness and composition using ellipsometric evaluation

One embodiment of the present invention provides a system that facilitates construction of electromagnetic, optical, chemical, and mechanical systems using chemical endpoint detection. The system operates by receiving a system description that specifies multiple components, including a first component and a second component. The system fabricates the first component and the second component using selected construction materials. The system also creates a first interconnection structure on the first component and a second interconnection structure on the second component. These interconnection structures can be created using a sacrificial layer and chemical endpoint detection. Next, the system brings the first component and the second component together by connecting the first interconnection structure and the second interconnection structure. These interconnection structures align the first component to the second component so that accurate alignment can be achieved.

Fabrication of electronic magnetic, optical, chemical, and mechanical systems using chemical endpoint detection

One embodiment of the present invention provides a system to facilitate using selective etching to form optical components on a circuit device. The system operates by receiving a substrate composed of a first material including a buffer layer composed of a second material. The system forms a sacrificial layer composed of a third material on the buffer layer. Next, the system forms an optical fiber core composed of a fourth material on the sacrificial layer. After the optical fiber core has been formed, the system performs an etching operation using a selective etchant to remove the sacrificial layer. The system also applies a cladding layer to the optical fiber core.

Fabrication of optical components using Si, SiGe, SiGeC, and chemical endpoint detection

One embodiment of the present invention provides a process for selective etching during semiconductor manufacturing. The process starts by receiving a silicon substrate with a first layer composed of a first material, which is covered by a second layer composed of a second material. The process then performs a first etching operation that etches some but not all of the second layer, so that a portion of the second layer remains covering the first layer. Next, the system performs a second etching operation to selectively etch through the remaining portion of the second layer using a selective etchant. The etch rate of the selective etchant through the second material is faster than an etch rate of the selective etchant through the first material, so that the second etching operation etches through the remaining portion of the second layer and stops at the first layer.

Method and apparatus for fabricating structures using chemically selective endpoint detection

One embodiment of the present invention provides a system for using selective etching to form three-dimensional components on a substrate. The system operates by receiving a substrate composed of a first material. Next, a second layer composed of a second material is formed on selected portions of the substrate. A third layer composed of a third material is then formed over the substrate and the second layer. Finally, an etching operation using a selective etchant is used to remove the second layer, thereby leaving the substrate, which forms a first active layer, and leaving the third layer, which forms a second active layer.

Growing community of inventors

Davis, CA, United States of America

Charles E Hunt