Epcos Ag

Qualcomm Incorporated

Charles Binninger

Ulrich Knauer

Helmut Zottl

Werner Ruile

Tomasz Jewula

Rudolf Nuessl

Christoph Eggs

Manfred Maisch

Bruno Fuerbacher

A metallization, for carrying current in an electrical component, includes a bottom layer overlying a substrate surface and includes titanium (Ti) or a titanium compound as main constituent. An upper layer overlies the bottom layer and includes copper (Cu) as main constituent. The bottom layer and the upper layer form a base layer. A top layer is in direct contact with the upper layer and includes aluminum (Al) as main constituent. The base layer further includes a middle layer, consisting of silver, that is arranged between the bottom layer and the upper layer.

Metallization having high power compatibility and high electrical conductivity

A method for producing a dielectric layer on the surface of a component is described. In particular embodiments, a dielectric layer having a planar surface can be generated over a substrate topography having raised structures. In a trimming process, a component property, which depends on the thickness or the third topography of the dielectric layer, is adjusted.

Method for producing a dielectric layer on a component

A metallization can be used for components working with acoustic waves. The metallization includes a base having a bottom layer comprising titanium, and an upper layer comprising copper. A top layer of the metallization disposed on the base comprises aluminum.

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Munich, Germany

Charles Binninger