Stmicroelectronics (crolles 2) Sas

Stmicroelectronics S.a.

Stmicroelectronics S.r.l.

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics (alps) Sas

Stmicroelectronics (grenoble 2) Sas

Charles Baudot

Frédéric Boeuf

Sébastien Cremer

Jean-Francois Carpentier

Sylvain Guerber

Denis Pellissier-Tanon

Nathalie Vulliet

Jean-Robert Manouvrier

Fabrice Nemouchi

Alain Chantre

Patrick Le Maitre

Antonio Fincato

Bertrand Borot

Patrick LeMaitre

Florian Domengie

Yves Morand

Philippe Rodriguez

Jean-François Carpentier

Maurin Douix

Yann Bogumilowicz

Elodie Ghegin

A photonic system includes a first photonic circuit having a first face and a second photonic circuit having a second face. The first photonic circuit comprises first wave guides, and, for each first wave guide, a second wave guide covering the first wave guide, the second wave guides being in contact with the first face and placed between the first face and the second face, the first wave guides being located on the side of the first face opposite the second wave guides. The second photonic circuit comprises, for each second wave guide, a third wave guide covering the second wave guide. The first photonic circuit comprises first positioning devices projecting from the first face and the second photonic circuit comprises second positioning devices projecting from the second face, at least one of the first positioning devices abutting one of the second positioning devices in a first direction.

Photonic system and method for its manufacture

A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.

Germanium photodiode

A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.

Vertical photodiode

A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

Integrated photonic device with improved optical coupling

A process for fabricating a heterostructure includes at least one elementary structure made of III-V material on the surface of a silicon-based substrate successively comprising: producing a first pattern having at least a first opening in a dielectric material on the surface of a first silicon-based substrate; a first operation for epitaxy of at least one III-V material so as to define at least one elementary base layer made of III-V material in the at least first opening; producing a second pattern in a dielectric material so as to define at least a second opening having an overlap with the elementary base layer; a second operation for epitaxy of at least one III-V material on the surface of at least the elementary base layer made of III-V material(s) so as to produce the at least elementary structure made of III-V material(s) having an outer face; an operation for transferring and assembling the at least photonic active elementary structure via its outer face, on an interface that may comprise passive elements and/or active elements, the interface being produced on the surface of a second silicon-based substrate; removing the first silicon-based substrate and the at least elementary base layer located on the elementary structure.

Method for fabricating a heterostructure comprising active or passive elementary structure made of III-V material on the surface of a silicon-based substrate

In one embodiment, an electro-optical modulator includes a waveguide having a first major surface and a second major surface opposite the first major surface. A cavity is disposed in the waveguide. Multiple quantum wells are disposed in the cavity.

Electro-optical modulator and methods of formation thereof

An optical waveguide is configured to propagate a light signal. Metal vias are arranged along and on either side of a portion of the optical waveguide. Additional metal vias are further arranged along and on either side of the optical waveguide both upstream and downstream of the portion of the optical waveguide. The metal vias and additional metal vias are oriented orthogonal to a same plane, the same plane being orthogonal to a transverse cross-section of the portion of the optical waveguide.

Filtering device in a waveguide

In one embodiment, a waveguide includes an upstream portion, a downstream portion, and an intermediate portion between the upstream portion and the downstream portion. A first band is disposed on an insulating layer, the first band oriented along a first direction. A first lateral strip and a second lateral strip are disposed on either side of the first band, the first lateral strip and the second lateral strip being thinner or interrupted along the intermediate portion.

Wave guide

An optical waveguide termination device includes a waveguide and metal vias surrounding an end portion of the waveguide. The end portion of the waveguide has a transverse cross-sectional area that decreases towards its distal end. The metal vias are orthogonal to a same plane, with the same plane being orthogonal to the transverse cross-section. The metal vias absorb light originating from the end portion when a light signal propagates through the waveguide, and the metal vias and the end portion provide that an effective index of an optical mode to be propagated through the waveguide progressively varies in the end portion. Additional metal vias may be present along the waveguide upstream of the end portion, with the additional metal vias bordering the waveguide upstream of the end portion providing that the effective index of an optical mode to be propagated through the waveguide varies progressively toward the end portion.

Waveguide termination device

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Lumbin, France

Charles Baudot