Texas Instruments Corporation

Charles Allen Martin

Mukul Saran

Ronald H Cox

Byron Harry Gibbs

One embodiment of the present invention includes a method for reactively cleaning a contact mechanism. The method includes measuring contact resistance (CRES) associated with a plurality of electrical contacts of the contact mechanism. The method also includes generating at least one statistic of the measured CRES associated with the plurality of electrical contacts of the contact mechanism, and comparing the at least one statistic of the CRES associated with the plurality of electrical contacts of the contact mechanism with at least one CRES threshold parameter associated with an unacceptable level of CRES. The method further includes cleaning the plurality of electrical contacts of the contact mechanism based on the comparison of the at least one statistic of the CRES and the at least one CRES threshold parameter.

Contact mechanism cleaning

A reinforcing system and method of fabrication for a semiconductor integrated circuit bond pad comprises a first dielectric layer or stack disposed under the bond pad; at least one second dielectric layer or stack disposed under the first dielectric layer; and a reinforcing metal structure disposed into the second dielectric layer such that the patterns of the metal structure and the second dielectric layer comprise a uniformly flat interface towards the first dielectric layer. The patterns of the metal structure and the second dielectric layer comprise feature sizes and fine pitches used in the integrated circuit.

Fine pitch system and method for reinforcing bond pads in semiconductor devices

A reinforcing system for a bond which includes at least one dielectric layer or stack disposed under the bond pad. A reinforcing patterned structure is disposed in the dielectric layer or stack with the delectric filling the portion of the patterned structure from which the structure was removed after patterning.

System and method for reinforcing a bond pad

The reinforcing system (10, 70, 90) for a bond pad (12, 72, 92) includes at least one dielectric layer or stack (20, 21, 22, 76, 78, 96, 98) disposed under the bond pad (12, 72, 92). A reinforcing patterned structure (30, 80, 82, 100, 102) is disposed in the dielectric layer or stack (20, 21, 22, 76, 78, 96, 98).

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Melissa, TX, United States of America

Charles Allen Martin