International Business Machines Corporation

Charles A Schaefer

Francis Roger White

Henry J Geipel, Jr

John Michael Wursthorn

A process is provided for fabricating a semiconductor structure wherein the structure has to be exposed to certain oxidizing conditions during certain of its processing steps, such as its high temperature annealing in an oxidizing ambient. It includes depositing a 'sacrificial' layer, such as silicon, to provide a uniformly oxidizing surface during subsequent annealing operations. This sacrificial layer, which oxidizes uniformly, produces an oxide layer which also etches uniformly. Thus, after the annealing is completed, the surface oxide is removed through etching and the sacrificial layer is then also removed through a different etching step.

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Essex Junction, VT, United States of America

Charles A Schaefer