Merck Patent Gmbh

Charith Nanayakkara

Jacob Woodruff

Peer Kirsch

Henning Seim

Sebastian Resch

Charles Dezelah

Marc Tornow

Daniel Moser

Gerd-Volker Roeschenthaler

Romana Pajkert

Joby Eldo

Ravindra Kanjolia

Takuya Kamiyama

Mark C Potyen

Shawn Sungeun Hong

Compounds for selectively forming metal-containing films are provided. Methods of forming metal-containing films are also provided. The methods include forming a blocking layer, for example, on a first substrate surface, by a first deposition process and forming the metal-containing film, for example, on a second substrate surface, by a second deposition process.

Compounds and methods for selectively forming metal-containing films

A process is described for production of a molecular layer on a substrate using atomic layer deposition (ALD) techniques, for use in electronic components, in particular, in memory elements of the ReRAM type. Additionally, compounds for production of the molecular layer are disclosed, as well as memory elements containing the molecular layer.

Process for the production of a molecular layer and electronic component comprising same

The invention relates to a process for the production of an electronic component comprising a self-assembled monolayer (SAM) using compounds of the formula IR-(A-Z)—(B)—(Z-A)-Sp-G  (I)in which the groups occurring have the meanings defined in Claim; the present invention furthermore relates to the use of the components in electronic switching elements and to compounds for the production of the SAM.

Method for producing an electronic component which includes a self-assembled monolayer

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Philadelphia, PA, United States of America

Charith Nanayakkara