Xiamen Sanan Optoelectronics Technology Co., Ltd.

Xiamen San'an Optoelectronics Co., Ltd

Tianjin Sanan Optoelectronics Co., Ltd.

Tiajin Sanan Optoelectornics Co., Ltd.

Xiamen Sanan Optoelectron Co., Ltd.

Chaoyu Wu

Duxiang Wang

Chun-Yi Wu

Ching-Shan Tao

Shu-Fan Yang

Chun-I Wu

Wenbi Cai

Dongyan Zhang

Yi-Jui Huang

Weihuan Li

Junkai Huang

Shuying Qiu

Hongliang Lin

Chao Liu

Weiping Xiong

Kunhuang Cai

Chun Kai Huang

ChingYuan Tsai

Liming Shu

Cuicui Sheng

Xiaofeng LiU

Fulong Li

Wenhao Gao

Meijia Yang

Wei-ping Xiong

Da-qian Ye

Guanying Huang

Jiansen Zheng

Jin Wang

Feng Lin

Shuiqing Li

Xiaofeng Liu

Jingfeng Bi

Liangjun Wang

Yi-an Lu

Senlin Li

Mingyue Wu

Chilun Chou

Jun-Zhao Zhang

Cai-hua Qiu

Xiao Luo

Daqian Ye

Chih Pang Ma

Wen-Hao Gao

Sha-sha Chen

Chao Jin

Huan-shao Kuo

Shih-Yi Lien

Yi-Yen Chen

Chuang Yu Hsieh

Zhendong Ning

Chen Kang Hsieh

Ling-Fei Wang

Yuan-yu Zheng

A flip-chip light emitting diode includes a light-emitting epitaxial laminated layer having a first surface, and a second surface opposing the first surface, and including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein the first surface is a roughened surface; a transparent bonding medium layer over the first surface of the light-emitting epitaxial laminated layer and bonded with a transparent substrate; and a first electrode and a second electrode respectively over a first electrode region and a second electrode region over the second surface of the light-emitting epitaxial laminated layer.

Flip-chip light emitting diode and manufacturing method thereof

A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.

Light emitting device and production method and use thereof

A method of manufacturing a flip-chip light emitting diode includes: providing a transparent substrate and a temporary substrate, and bonding the transparent substrate with the temporary substrate; grinding and thinning the transparent substrate; providing a light-emitting epitaxial laminated layer having a first surface and a second surface opposite to each other, and including a first semiconductor layer, an active layer and a second semiconductor layer; forming a transparent bonding medium layer over the first surface of the light-emitting epitaxial laminated layer, and bonding the transparent bonding medium layer with the transparent substrate; defining a first electrode region and a second electrode region over the second surface of the light-emitting epitaxial laminated layer, and manufacturing a first electrode and a second electrode; and removing the temporary substrate.

A method for producing a light omitting device includes providing a substrate and forming an epitaxial structure thereon, forming first and second electrodes on a side of the epitaxial structure facing away from the substrate, and removing the substrate. The epitaxial structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, and an AlGaAs-based semiconductor layer formed on the substrate in a distal-to-proximal manner. The AlGaAs-based semiconductor layer has a thickness of not less than 30 &#x3bc;m, and is configured to support the rest of the epitaxial structure and serve as a light exiting layer. The device produced by the method is also disclosed.

Disclosed herein is a light emitting diode (LED), which includes a first-type semiconductor unit, an active layer formed on the first-type semiconductor unit, and a second-type semiconductor unit formed on the active layer oppositely of the first-type semiconductor unit. The second-type semiconductor unit includes a hole storage structure that has a polarization field having a direction pointing toward the active layer.

Light-emitting diode

A light-emitting diode includes: a light emitting epitaxial structure including a first-type semiconductor layer, an active layer and a second-type semiconductor layer, and having a first surface as a light emitting surface, and an opposing second surface; a conducting layer formed over the second surface and including a physical plating layer and a chemical plating layer, wherein the physical plating layer is adjacent to the light emitting epitaxial structure and has cracks, and the chemical plating layer fills the cracks in the physical plating layer; and a submount coupled to the light emitting epitaxial laminated layer through the conducting layer.

Light emitting diode and fabrication method thereof

A multi-layered tunnel junction structure adapted to be disposed between two light emitting structures includes an n-type doped insulation layer, as well as an n-type heavily doped layer, a metal atom layer, a p-type heavily doped layer, and a p-type doped insulation layer which are disposed on the n-type doped insulation layer in such sequential order. A light emitting device having the multi-layered tunnel junction structure and a production method of such light emitting device are also disclosed.

Multi-layered tunnel junction structure, light emitting device having the same, and production method of such device

A light emitting device includes a light emitting structure and a distributed Bragg reflector (DBR) structure disposed thereon. The light emitting structure includes an n-type confinement layer, an active layer disposed on the n-type confinement layer, and a p-type confinement layer disposed on the active layer opposite to the n-type confinement layer. The n-type and p-type confinement layers are disposed proximal and distal to the DBR structure, respectively. The DBR structure includes first to NDBR units. The first and NDBR units are disposed proximal and distal to the light emitting structure, respectively. Each of the first to NDBR units has a center reflection wavelength defined by &#x3bb;+(z&#x2212;1)&#x3bb;.

Light emitting device

A light-emitting diode includes a PN junction light-emitting portion over a substrate; wherein the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer, wherein the strained light-emitting layer with a component formula of GaInAsP, 0&#x3c;X&#x3c;1 and 0&#x3c;Y&#x2264;0.05, and the barrier layer has a component formula of (AlGa)InP, 0.3&#x2264;a&#x2264;1 and 0&#x3c;b&#x3c;1; when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has an output power at least 202.2 mW.

LED for plant illumination

An epitaxial wafer for plant lighting light-emitting diodes (LED), the epitaxial wafer includes: a growth substrate; a first red-light epitaxial laminated layer; a distributed Bragg reflector (DBR) semiconductor laminated layer; and a second red-light epitaxial laminated layer; wherein: the first red-light epitaxial laminated layer comprises a first N-type ohmic contact layer, a first N-type covering layer, a first light-emitting layer, a first P-type covering layer, and a first P-type ohmic contact layer; and the second red-light epitaxial laminated layer comprises a second N-type ohmic contact layer, a second N-type covering layer, a second light-emitting layer, a second P-type covering layer, and a second P-type ohmic contact layer.

A light-emitting diode (LED) includes an epitaxial laminated layer with an upper surface and an opposing lower surface, the LED including: a first-type semiconductor layer; an active layer; and a second-type semiconductor layer. A portion of the first-type semiconductor layer and the active layer are etched to expose a portion of the second-type semiconductor layer; a first electrode and a second electrode are disposed over the lower surface of the epitaxial laminated layer; the first electrode is disposed over a surface of the first-type semiconductor layer; the second electrode is disposed over a surface of the exposed second-type semiconductor layer; a transparent medium layer over the upper surface of the epitaxial laminated layer, having a refractive index n&#x3e; 1.6; a transparent bonding medium layer over one upper surface of the transparent medium layer, having a refractive index n&#x3c;n1.

Flip-chip light emitting diode chip and fabrication method

A light-emitting diode chip includes a light-emitting epitaxial laminated layer including a first-type semiconductor layer, a second-type semiconductor layer, and an active layer therebetween, wherein the light-emitting epitaxial laminated layer has a first surface and an opposing second surface, and wherein the second surface is a light-emitting surface; a first electrical connection layer over the first surface of the light-emitting epitaxial laminated layer and having first geometric pattern arrays; a second electrical connection layer over the second surface of the light-emitting epitaxial laminated layer and having second geometric pattern arrays; and a transparent current spreading layer over a surface of the second electrical connection layer; wherein, when external power is connected, a horizontal resistance of a current passing through the transparent current spreading layer is less than a current passing through the second electrical connection layer.

Light emitting diode chip and fabrication method

A nitride underlayer includes: a pattern substrate with lattice planes of different growth rates; a nitride nucleating layer over the pattern substrate; a first nitride layer with three-dimensional growth over the nitride nucleating layer, and forming a nanopillar structure at a top of the substrate; a second nitride layer with two-dimensional growth over the first nitride layer, and folding into an uncracked plane over the nanopillar structure.

Nitride underlayer and fabrication method thereof

A light-emitting diode includes an epitaxial-laminated layer, including an n-type ohmic contact layer; a first n-type transition layer; a second n-type transition layer; an n-type confinement layer; an active layer; a p-type confinement layer; a p-type window layer; a first electrode over an upper surface of the epitaxial-laminated layer; and a conductive substrate located over a bottom surface of the epitaxial-laminated layer.

Growing community of inventors

Xiamen, China

Chaoyu Wu