Boe Technology Group Co., Ltd.

Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Chaowei Hao

Xuechao Sun

Ming Wang

Dongfang Wang

Tao Ma

Liangchen Yan

Haitao Wang

Wei Song

Ce Zhao

Bo Feng

Guangyao Li

Yingbin Hu

Rong Liu

Yuankui Ding

Wei Cai

Liusong Ni

Biao Luo

Xuehai Gui

Jin Su

Yanbo Chen

Yanfei Wan

Qibin Liang

The disclosure provides a thin film transistor, a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor comprises a base substrate, and an active layer disposed on the base substrate, and the active layer comprises a channel region, and a source contact region and a drain contact region respectively positioned at two sides of the channel region; and a portion of at least one of the source contact region and the drain contact region close to the channel region includes a plurality of first sub-grooves disposed at a side of the active layer proximal to the base substrate and a plurality of second sub-grooves disposed at a side of the active layer distal to the base substrate, and the plurality of first sub-grooves and the plurality of second sub-grooves being alternately disposed along a direction parallel to an extension of the channel region.

Thin film transistor and manufacturing method thereof, display substrate and display apparatus

A method of detecting threshold voltage shift and a threshold voltage shift detection device are provided. The method is applied to a pixel driving circuit which I is electrically coupled to a control line, a voltage line and a detection node, respectively. The method includes: in a detection cycle including a setting phase and a detection phase, in the setting phase, controlling a transistor included in the pixel driving circuit to be in a biased state; in the detection phase, providing a preset control voltage signal to the control line, providing a preset voltage signal to the voltage line, and determining a threshold voltage shift state of the transistor according to an electric potential of the detection node.

Method of detecting threshold voltage shift and threshold votage shift detection device

The present disclosure provides a transparent conductive structure and a preparation method thereof, a display substrate, and a touch substrate, which belongs to the technical field of display panels. The transparent conductive structure is provided on a substrate. The method for manufacturing a transparent conductive structure includes: providing the substrate; forming a transparent conductive layer on the substrate; forming a heat insulation layer on a surface of the transparent conductive layer away from the substrate, the heat insulation layer having at least one window region exposing the transparent conductive layer; heating the transparent conductive layer for a preset time period, to form at least one insulating region on the transparent conductive layer; and removing the heat insulation layer.

Transparent conductive structure and preparation method thereof, display substrate and touch substrate

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Beijing, China

Chaowei Hao