Boe Technology Group Co., Ltd.

Beijing Boe Display Technology Co., Ltd.

Chaoqin Xu

Liping Luo

Kiyong Kim

Zengbiao Sun

Tao Wang

Jeong Hun Rhee

Huishuang Liu

Huali Yao

Xiangnan Yun

Shaoshuai Mu

Guangming Lu

Ziqing Zhou

Embodiments of the present disclosure disclose a thin film transistor, a fabrication method thereof, a repair method thereof, and an array substrate. The thin film transistor comprises a gate electrode (), a gate insulating layer (), an active layer (), a source electrode () and a drain electrode (). The source electrode () comprises a first source electrode portion () and a second source electrode portion () independent from each other, the first source electrode portion () and the second source electrode portion () are electrically connected with the active layer (), respectively; and/or, the drain electrode () comprises a first drain electrode portion () and a second drain electrode portion () independent from each other, the first drain electrode portion () and the second drain electrode portion () are electrically connected with the active layer (), respectively.

Thin film transistor, fabrication method thereof, repair method thereof and array substrate

A detection device and a detection method are disclosed in the embodiments. The detection device comprises a light source, a first image information acquisition unit, a first charge coupled device (CCD), a first light splitter, and a first analyzer. The first image information acquisition unit is configured to receive a first light signal from the light source and transmit the first light signal onto a substrate, and to acquire a first image light signal generated by transmitting the first light signal onto both an edge of a first ID figure on the substrate and an edge of the substrate, and transmit the first image light signal to the first light splitter; the first light splitter is configured to transmit the first image light signal to the first CCD so that the first CCD outputs a first electrical signal; and the first analyzer is configured to receive the first electrical signal outputted from the first CCD and analyze wave crests of the first electrical signal, thereby obtaining a distance between the edge of the first ID figure on the substrate and the edge of the substrate. The detection part and detection method are used for substrate detection.

Detection device and method

An embodiment of the present invention discloses a mask. The mask comprises: a substrate; a light transmission area on the substrate; a light shielding area on the substrate, provided with at least two light shielding layers, each of the at least two light shielding layers having a preset mask pattern and being conductive; and one or more connecting wire(s), configured to respectively electrically connect the at least two light shielding layers.

Mask

The invention relates to the technical field of an alignment method, and discloses a method for aligning substrate and mask, including: firstly forming at least one set of alignment marks on a mask plate; selecting a certain number of large-size substrates as sample substrates; forming a plurality of sets of alignment marks on each sample substrate using the mask plate and the at least one set of alignment marks formed thereon to divide the sample substrate into a plurality of sub-substrate areas; and then performing mask process on the respective sample substrates, accurate alignment for each sub-substrate area can be realized by means of the plurality of sets of alignment marks on the sample substrate, and one sub-substrate area can be accurately aligned by means of at least two sets of alignment marks formed on the sample substrate. In the alignment, positions of the plurality of sets of alignment marks formed on the sample substrate are recorded and stored, and mask process on a non-sample substrate is performed based on parameters relating to the stored positions of the plurality of sets of alignment marks, thus the seaming degree between patterns in the same layer and the coincidence degree between patterns in different layers on the non-sample substrate are guaranteed, so that mass production for large-size substrates with good quality can be realized. The invention also discloses a method for preparing semiconductor device.

Method for aligning substrate and mask and method for preparing semiconductor device

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Beijing, China

Chaoqin Xu