Tohoku University

Chaoling Zhang

Tetsuo Endoh

Hideo Ohno

Shunsuke Fukami

Tetsuro Anekawa

A magnetoresistance effect element () includes a heavy metal layer () that includes a heavy metal and that is formed to extend in a first direction, a recording layer () that includes a ferromagnetic material and that is provided adjacent to the heavy metal layer (), a barrier layer () that includes an insulating material and that is provided on the recording layer () with being adjacent to a surface of the recording layer () opposite to the heavy metal layer (), and a reference layer () that includes a ferromagnetic material and that is provided adjacent to a surface of the barrier layer (), the surface being opposite to the recording layer (). The direction of the magnetization of the reference layer () has a component substantially fixed in the first direction, and the direction of the magnetization of the recording layer () has a component variable in the first direction. A current having a direction same as the first direction is introduced to the heavy metal layer () to thereby enable the magnetization of the recording layer () to be inverted.

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Sendai, Japan

Chaoling Zhang