Tohoku University

Chaoliang Zhang

Tetsuo Endoh

Hideo Ohno

Shunsuke Fukami

Kyota Watanabe

Ayato Ohkawara

The magnetic memory element () includes: a conductive layer that includes a heavy metal layer () containing a 5d transition metal; a first ferromagnetic layer () that is adjacent to the conductive layer and contains a ferromagnetic layer having a reversible magnetization; a barrier layer () that is adjacent to the first ferromagnetic layer () and includes an insulating material; a reference layer () that is adjacent to the barrier layer () and has at least one second ferromagnetic layer () having a fixed magnetization direction; a cap layer () that is adjacent to the reference layer () and includes a conductive material; a first terminal (T) that is capable of introducing a current into one end of the heavy metal layer () in the longitudinal direction; a second terminal (T) that is capable of introducing a current into the other end of the heavy metal layer () in the longitudinal direction; and a third terminal (T) that is capable of introducing a current into the cap layer ().

Growing community of inventors

Sendai, Japan

Chaoliang Zhang